Landolt-Brnstein Group III: Condensed Matter 
Subvolume D Interaction of Radiation with Surfaces and Electron Tunneling 
Volume 24 Physics of Solid Surfaces 

Introductory material  
1  General introduction (G. CHIAROTTI)  1  
1.1  Motivations for a Landolt-Bmstein volume on surface physics  1  
1.2  Outline of the volume  2  
1.3  How to consult the volume  12  
1.4  List of frequently used symbols and abbreviations  13  
1.5  Conversion tables  20  
1.6  Crystal structures and bulk lattice parameters of materials quoted in the volume  21  
1.7  References for 1  27  
2  See Vol. 24A  
3 - 5  See Vol. 24B  
6 - 7  See Vol. 24C  
8  Interaction of electromagnetic radiation with surfaces  29  
8.1  Optical properties of surfaces (P. CHIARADIA)  29  
8.1.1  Introduction  29  
8.1.1.1  Preliminary remarks  29  
8.1.1.2  Differential reflection  29  
8.1.1.3  Surface ellipsometry  32  
8.1.1.4  Surface photoconductivity  34  
8.1.1.5  Surface photovoltage spectroscopy  34  
8.1.1.6  Photothermal displacement spectroscopy  35  
8.1.1.7  Surface photoluminescence  36  
8.1.1.8  Surface second-harmonic generation  36  
8.1.2  Data  36  
8.1.2.1  Metals  36  
8.1.2.2  Semiconductors  38  
8.1.2.2.1  Covalent semiconductors  38  
8.1.2.2.2  III-V compounds  53  
8.1.2.2.3  ZnO (1100)  66  
8.1.3  Appendix  67  
8.1.4  References for 8.1  68  
8.2  Photoemission and inverse photoemission  70  
(A.M. BRADSHAW, R. HEMMEN, D.E. RICKEN, TH. SCHEDEL-NIEDRIG)  
8.2.1  Introduction  70  
8.2.2  Data  76  
8.2.2.1  Metals  77  
8.2.2.1.1  Group IA (alkali metals); Li, Na, K, Rb, Cs  77  
8.2.2.1.2  Group IIA (alkaline earth metals); Be, Mg  86  

8.2.2.1.3 
Group IIIA; Al 100

8.2.2.1.4 
Group IIIB; Sc, Y, Lanthanides 112

8.2.2.1.5 
Group IVB; Ti 124

8.2.2.1.6 
Group VB; Nb,Ta 127

8.2.2.1.7 
Group VIB; Cr, Mo, W 137

8.2.2.1.8 
Group VIIB; Re 161

8.2.2.1.9 
Group VIH; Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt 162

8.2.2.1.10 
Group IB (noble metals); Cu, Ag, Au 195

8.2.2.1.11 
Group VA; Bi 227

8.2.2.2 
Semiconductors 231

8.2.2.2.1 
Group IVA semiconductors; C, Si, Ge 231

8.2.2.2.2 
Semiconducting Zn compounds; ZnO, ZnS, ZnSe 261

8.2.2.2.3 
II-VI compounds; CdS, CdSe, CdTe 265

8.2.2.2.4 
III-V compounds; GaP, GaAs, GaSb, InP, InAs, InSb 276

8.2.3 
References for 8.2 299

8.3 
X-ray diffraction of surface structures (R. COLELLA) 312

8.3.1 
Introduction 312

8.3.1.1 
Preliminary remarks 312

8.3.1.2 
General principles. Early experimental results 313

8.3.1.3 
In Plane Diffraction (IPD) 317

8.3.1.4 
Truncation Rod Scattering (TRS) 318

8.3.1.5 
Standing waves 320

8.3.2 
Data 323

8.3.3 
Referenees for 8.3 340

9 
Electron tunneling at surfaces 342

9.1 
Field emission, field ionization, and field desorption (G.L. KELWOG) 342

9.1.1 
Introduction 342

9.1.1.1 
General layout 342

9.1.1.2 
Field electron emission 343

9.1.1.2.1 
Theory of field electron emission 343

9.1.1.2.2 
Field emission microscopy 344

9.1.1.2.3 
Applications of field electron emission 344

9.1.1.3 
Field ion emission 346

9.1.1.3.1 
Theory of field ionization 346

9.1.1.3.2 
Field ion microscopy 347

9.1.1.3.3 
Applications of field ionization 348

9.1.1.4 
Field desorption 348

9.1.1.4.1 
Theory of field desorption 348

9.1.1.4.2 
Atom-probe mass spectroscopy 350

9.1.1.4.3 
Applications of field desorption 351

9.1.2 
Data 352

9.1.3 
References for 9.1 359

9.2 
Scanning tunneling microscopy (STM) (R.J. HAMERS) 363

9.2.1 
Introduction 363

9.2.1.1 
Principles and experimental implementation of STM 363

9.2.1.2 
Interpretation of STM images 364

9.2.1.3 
Electron structure effects 366

9.2.1.4 
Tunneling spectroscopy 368

9.2.1.5 
Limitations and continued development of STM 371

9.2.2 
Data 372

9.2.2.1 
Metals 372

9.2.2.2 
Semiconductors 374

9.2.3 
References for 9.2 398

10 
General index (compiled by C. GOLETTI) 403

10.1 
Introduction 403

10.2 
Index of surfaces 407



