Contents 
III/33 Diffusion in Semiconductors and Non-Metallic Solids 

Subvolume A
: Diffusion in Semiconductors 
1 
General introduction (D.L. BEKE) ............................ 1-1

1.1 
Atomic fluxes ...................................... 1-1

1.2 
Equations for diffusion .................................. 1-3

1.2.1 
Bulk diffusion ...................................... 1-4



1.2.1.1 
Tracer diffusion in a homogeneous matrix......................... 1-4

1.2.1.2 
Chemical diffusion .................................... 1-6

1.2.2 
Grain-boundary diffusion ................................. 1-9

1.2.2.1 
Self-diffusion...................................... 1-11

1.2.2.2 
Impurity diffusion and segregation ........................... 1-12

1.2.3 
Dislocation diffusion .................................. 1-12

1.2.4 
Surface diffusion .................................... 1-12

1.3 
Atomic mechanisms of diffusion ............................ 1-13

1.3.1 
Direct interstitial mechanism .............................. 1-14



1.3.2 
Indirect interstitial or interstitialcy mechanism ..................... 1-14

1.3.3 
Ring mechanism .................................... 1-14

1.3.4 
Vacancy mechanism .................................. 1-14

1.3.5 
Interstitial-substitutional mechanisms .......................... 1-14

1.3.6 
Other mechanisms ................................... 1-15



1.4 
Methods for measuring diffusion coefficients ...................... 1-15

1.4.1 
Macroscopic methods ................................. 1-16

1.4.1.1 
Steady-state methods .................................. 1-16

1.4.1.2 
Non steady-state methods................................ 1-16

1.4.2 
Microscopic methods.................................. 1-17

1.4.2.1 
Relaxation methods................................... 1-17

1.4.2.2 
Nuclear methods .................................... 1-18



1.5 
Temperature, pressure and mass dependence of diffusion ................ 1-18

1.5.1 
Temperature and pressure dependence ......................... 1-18

1.5.2 
Mass dependence.................................... 1-19

1.6 
Notations, use of the tables ............................... 1-19

1.7 
Further readings .................................... 1-20

1.7.1 
Textbooks ....................................... 1-20

1.7.2 
Proceedings ...................................... 1-20

1.7.3 
Collections of data ................................... 1-21

1.7.4 
Review articles ..................................... 1-21

1.8 
References for 1 .................................... 1-21


2 
Diffusion in silicon, germanium and their alloys (N.A. STOLWIJK, H. BRACHT) ..... 2-1

2.1 
Introduction ....................................... 2-1

2.1.1 
Characteristics of diffusion in semiconductors....................... 2-1

2.1.2 
Expressions for the diffusion coefficient ......................... 2-2

2.1.3 
Methods of measurement ................................. 2-5

2.1.4 
Notations and use of tables ................................ 2-6

2.2 
Diffusion in silicon ................................... 2-12

2.2.1 
Tables for 2.2 ..................................... 2-12


2.2.1.1 
Solute elements of group IA (hydrogen group) ..................... 2-12

2.2.1.2 
Solute elements of group IIA (beryllium group) ..................... 2-19

2.2.1.3 
Solute elements of group IIIB (scandium group including rare earth elements) ...... 2-20

2.2.1.4 
Solute elements of group IVB (titanium group) ..................... 2-22

2.2.1.5 
Solute elements of group VB (vanadium group) ..................... 2-23

2.2.1.6 
Solute elements of group VIB (chromium group) .................... 2-24

2.2.1.7 
Solute elements of group VIIB (manganese group) ................... 2-26

2.2.1.8 
Solute elements of group VIII (iron group) ....................... 2-28

2.2.1.9 
Solute elements of group VIII (cobalt group) ...................... 2-30

2.2.1.10 
Solute elements of group VIII (nickel group) ...................... 2-32

2.2.1.11 
Solute elements of group IB (copper group)....................... 2-35

2.2.1.12 
Solute elements of group IIB (zinc group)........................ 2-44

2.2.1.13 
Solute elements of group IIIA (boron group) ...................... 2-47

2.2.1.14 
Solute elements of group IVA (carbon group) ...................... 2-75

2.2.1.15 
Solute elements of group VA (nitrogen group) ..................... 2-89

2.2.1.16 
Solute elements of group VIA (oxygen group) .................... 2-124

2.2.1.17 
Solute elements of group VIIA (fluorine group) .................... 2-130

2.2.1.18 
Solute elements of group VIIIA (helium group) .................... 2-132


2.2.2 
Figures for 2.2 .................................... 2-135

2.2.3 
References for 2.1 and 2.2 .............................. 2-196

2.2.3.1 
Textbooks ...................................... 2-196

2.2.3.2 
Data collections ................................... 2-196

2.2.3.3 
Review papers .................................... 2-196

2.2.3.4 
Articles ....................................... 2-199

2.3 
Diffusion in germanium ............................... 2-222

2.3.1 
Tables for 2.3 .................................... 2-222


2.3.1.1 
Solute elements of group IA to group VIII ...................... 2-222

2.3.1.2 
Solute elements of group IB and group IIB ...................... 2-223


2.3.1.3 
Solute elements of group IIIA............................. 2-225

2.3.1.4 
Solute elements of group IVA ............................ 2-227

2.3.1.5 
Solute elements of group VA ............................. 2-228



2.3.1.6 
Solute elements of group VIA to group VIIIA..................... 2-230

2.3.2 
Figures for 2.3 .................................... 2-231

2.3.3 
References for 2.3 .................................. 2-237

2.3.3.1 
Textbooks ...................................... 2-237

2.3.3.2 
Data collections ................................... 2-237

2.3.3.3 
Review papers .................................... 2-237

2.3.3.4 
Articles ....................................... 2-238

2.4 
Diffusion in silicon-germanium alloys......................... 2-241

2.4.1 
Tables for 2.4 .................................... 2-241

2.4.2 
Figures for 2.4 .................................... 2-249

2.4.3 
References for 2.4 .................................. 2-256



3 
Diffusion in compound semiconductors (M.B. DUTT, B.L. SHARMA) .......... 3-1

3.1 
Introduction ....................................... 3-1

3.2 
Use of tables ....................................... 3-2

3.3 
Experimental methods .................................. 3-2

3.4 
Evaluation techniques .................................. 3-4



3.5 
Diffusion in III-V compounds and their ternary alloys ................... 3-6

3.5.1 
Self-diffusion....................................... 3-6

3.5.2 
Diffusion of shalllow donors ............................... 3-9

3.5.2.1 
Group IV impurities ................................... 3-9

3.5.2.2 
Group VI impurities .................................. 3-10

3.5.3 
Diffusion of shallow acceptors ............................. 3-14

3.5.4 
Diffusion of group I impurities ............................. 3-20

3.5.5 
Diffusion of other impurities .............................. 3-23


3.5.6 
Diffusion in III-V compound ternary alloys ....................... 3-27

3.6 
Diffusion in II-VI compounds and their ternary alloys .................. 3-31

3.6.1 
Diffusion of group II and group VI elements ...................... 3-31


3.6.1.1 
Metal self-diffusion................................... 3-32

3.6.1.2 
Chalcogen self-diffusion ................................ 3-32



3.6.1.3 
Complementary metal and chalcogen diffusion ..................... 3-32

3.6.2 
Diffusion of group I impurities ............................. 3-38

3.6.3 
Diffusion of donor impurities .............................. 3-40

3.6.3.1 
Group III impurities .................................. 3-41

3.6.3.2 
Group VII impurities .................................. 3-42

3.6.4 
Diffusion of other impurities .............................. 3-44



3.6.5 
Diffusion in II-VI compound ternary alloys ....................... 3-47

3.7 
Diffusion in IV-VI compounds ............................. 3-53

3.7.1 
Self-diffusion...................................... 3-53

3.7.2 
Impurity diffusion ................................... 3-53

3.8	
Diffusion in other useful compounds .......................... 3-59

3.8.1	
Diffusion in SiC .................................... 3-59



3.8.2	
Diffusion in some group II-V and V-VI compounds ................... 3-59

Figures for 3 ...................................... 3-64

3.9	
References for 3 .................................... 3-70

4	
Diffusion in silicides (P. GAS, F.M. d'HEURLE) ..................... 4-1

4.1	
Introduction ....................................... 4-1


4.2	
Diffusion controlled formation of silicide thin films .................... 4-5

4.3	
Diffusion controlled formation of "bulk" silicides .................... 4-12


4.4	
Tracer diffusion in silicides ............................... 4-15

Figures for 4 ...................................... 4-21

4.5	
References for 4 .................................... 4-35



5	
Chemical diffusion in semiconductors (C.M. BRUFF, G.E. MURCH) .......... 5-1

5.1	
Introduction ....................................... 5-1

5.2	
Use of the tables ..................................... 5-2

5.3	
Data ........................................... 5-3

Figures for 5 ....................................... 5-9

5.4	
References for 5 .................................... 5-25



6	
Grain-boundary and dislocation diffusion in

semiconductors and silicides (G. ERDLYI, D.L. BEKE) ................. 6-1

6.1	
Introduction ....................................... 6-1

6.1.1	
General remarks ..................................... 6-1

6.1.2	
Methods of measurements ................................ 6-1

6.1.2.1	
Low angle grain boundary method ............................ 6-1

6.1.2.2	
Defect annealing method ................................. 6-2

6.1.2.3	
Pavlov-Panteleev method ................................. 6-2


6.1.2.4	
Indirect methods in type-A kinetic regime......................... 6-2

6.1.2.5	
Determination of double products from creep and sintering experiments .......... 6-2


6.1.2.6	
Isoconcentration contour method ............................. 6-2

6.1.2.7	
Hwang-Balluffi method.................................. 6-3

6.1.2.8	
First appearance method ................................. 6-3

6.1.2.9	
Gilmer-Farrell method .................................. 6-3

6.2	
Use of tables and figures ................................. 6-4

6.2.1	
Some general remarks .................................. 6-4

6.2.2	
Practical guide to the use of the tables........................... 6-4

6.3	
Dislocation diffusion in semiconductors.......................... 6-6


6.4	
Grain-boundary diffusion in semiconductors and silicides ................. 6-9

6.4.1	
Grain-boundary diffusion in elemental semiconductors ................. 6-9

6.4.2	
Grain-boundary diffusion in compound semiconductors ................. 6-16


6.4.3 	
Grain-boundary diffusion in silicides ......................... 6-17

Figures for 6 ...................................... 6-20

6.5	
References for 6 .................................... 6-24



7	
Surface diffusion on semiconductors (E.G. SEEBAUER, C.E. ALLEN) .......... 7-1

7.1	
Introduction ....................................... 7-1

7.1.1	
General remarks ..................................... 7-1

7.1.2	
Definitions of diffusion parameters ............................ 7-1

7.2	
Experimental techniques ................................. 7-2

7.2.1	
Single-atom imaging ................................... 7-2

7.2.2	
Electron diffraction .................................... 7-3

7.2.3	
Chemical state relaxation ................................. 7-3

7.2.4	
Spin axis relaxation .................................... 7-4

7.2.5	
Profile evolution ..................................... 7-4

7.2.6	
Capillarity-driven effects ................................. 7-5

7.2.7	
Island growth ....................................... 7-5

7.2.8	
Miscellaneous ...................................... 7-6

7.3	
Physical picture ...................................... 7-6

7.3.1	
Intrinsic diffusion ..................................... 7-6

7.3.2	
Mass transfer diffusion .................................. 7-6

7.4	
General correlations.................................... 7-8

7.4.1	
Intrinsic diffusion ..................................... 7-8

7.4.2	
Mass transfer diffusion .................................. 7-8

7.4.3	
Adsorbate concentration dependence............................ 7-9

7.5	
Commentary to tables ................................... 7-9

7.6	
Surface diffusion tables ................................. 7-10

Figures for 7 ...................................... 7-13

7.7	
Special references: review articles ............................ 7-17

7.8	
References for 7 .................................... 7-18






