ISBN: 3-540-65794-0
TITLE: Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
AUTHOR: Ledentsov, Nikolai N.
TOC:

1. Introduction 1
2. Basics of MBE Growth 3
2.1 MBE Apparatus 3
2.2 Understanding of MBE Growth Processes 5
2.3 SolidVapor Equilibrium for Binary Compounds 8
2.4 LiquidSolidVapor Equilibrium for Binary Compounds 15
2.5 Particular IIIV Materials 16
2.5.1 AlAs 16
2.5.2 InAs 17
2.5.3 InP 18
2.5.4 GaP 19
2.6 SolidVapor Equilibrium for Ternary Compounds 20
2.7 LiquidSolidVapor Equilibrium for Ternary Compounds: Surface Segregation of More Volatile Elements 22
3. Doping and Impurity Segregation Effects in MBE 33
3.1 Point-Defect Equilibria in MBE 33
3.2 Impurity Incorporation in MBE 36
3.2.1 General Consideration 36
3.2.2 Manganese Doping of GaAs 37
3.2.3 GaAs Doping with Zn, Cd, Pb, Mg 39
3.2.4 GaAs Doping with S, Se, Te 40
3.2.5 GaAs Doping with Amphoteric Impurities: Ge, Si, Sn 41
3.3 Impurity Segregation in MBE 43
3.4 Interplay Between Impurity Segregation and Diffusion in MBE 47
4. Influence of Strain in the Epitaxial Film on Surface-Phase Equilibria 59
4.1 MBE Growth of Lattice-Mismatched Binary Compound 59
4.2 Growth of Lattice-Matched Solid Solution Formed From Lattice-Mismatched Binaries 66
5. IIVI Materials 71
6. Conclusion 75
Index 83
END
