ISBN: 3-540-65714-2
TITLE: Technology and Applications of Amorphous Silicon
AUTHOR: Street, Robert A. (Ed.)
TOC:

1 Introduction 1
Robert Street
1.1 Overview of the Book 1
1.2 Development of Amorphous Silicon 2
1.3 Basic Properties of Amorphous Silicon 3
References 5
2 Active-Matrix Liquid-Crystal Displays 7
Toshihisa Tsukada
2.1 Introduction 7
2.2 TFT LCD 9
2.2.1 TFT LCD Configuration 9
2.2.2 Pixel Design 14
2.2.3 Design Analysis 17
2.2.4 Scaling Theory of TFT LCD 26
2.2.5 Fabrication of TFT Panels 34
2.3 Thin-Film Transistors 36
2.3.1 Hydrogenated Amorphous Silicon Thin-Film Transistors 39
2.3.2 TFT Characteristics 41
2.3.3 Threshold Voltage Shift 49
2.3.4 Simulation of TFT Behavior 53
2.3.5 Two-Terminal Devices 60
2.4 Liquid Crystal 61
2.4.1 Physical Constants of Liquid Crystal 64
2.4.2 Twisted-Nematic Cell 69
2.4.3 In-Plane-Switching Cell 81
2.4.4 Super-Twisted Nematic (STN) Cell 87
References 89
3 Laser Crystallization for Polycrystalline Silicon Device Applications 94
James B. Boyce and Ping Mei
3.1 Introduction 94
3.2 Laser Processing of Polysilicon 96
3.2.1 Polysilicon 96
3.2.2 Laser Crystallization 101
3.2.3 Grain Growth 105
3.2.4 Surface Roughening 110
3.2.5 Laser Doping 111
3.3 Low-Temperature Poly-Si Devices 117
3.3.1 Device Fabrication 118
3.3.2 CMOS Device Performance 121
3.3.3 Device Leakage Currents 126
3.3.4 Device Stability 130
3.4 Integration of a-Si and Poly-Si TFTs 132
3.4.1 Development of Hybrid a-Si and Poly-Si Devices 133
3.4.2 Hybrid Materials Processing 135
3.4.3 Device Fabrication and Performance 138
3.5 Conclusion 142
References 143
4 Large Area Image Sensor Arrays 147
Robert Street
4.1 Introduction 147
4.2 Devices 148
4.2.1 P-i-n Photodiodes 148
4.2.2 Thin Film Transistors 157
4.3 Sensor Array Designs 160
4.3.1 Matrix Addressed Readout 161
4.3.2 TFT Addressed, p-i-n Photodiode Arrays 161
4.3.3 High Fill Factor Array Designs 171
4.3.4 TFT Addressed, X-Ray Photoconductor Arrays 172
4.3.5 Diode Addressed Arrays 175
4.3.6 CMOS Sensors 178
4.4 Imaging Systems and Their Performance 178
4.4.1 Electronics 179
4.4.2 Electronic Noise 185
4.4.3 X-Ray Detection 191
4.4.4 The Performance of X-Ray Detectors 194
4.5 Applications of Large Area Image Sensors 204
4.5.1 Medical X-Ray Imaging 204
4.5.2 Other Radiation Imaging Applications 211
4.5.3 Document Scanning 214
4.6 Future Developments 216
References 217
5 Novel Processing Technology for Macroelectronics 222
S. Wagner, H. Gleskova, J.C. Sturm, and Z. Suo
5.1 Introduction 222
5.2 Resolution and Registration: The Density of Functions Achievable by Printing 225
5.3 Printed Toner Masks for Etching and Liftoff 228
5.3.1 Toner Masks via Paper Transfer: TFTs on Glass Foil 228
5.3.2 All Masks Printed Directly: TFTs on Steel Foil 230
5.4 Printing Active Materials: Jetting Doped Polymers for Organic Light Emitting Device 232
5.5 Substrates and Encapsulation for Macroelectronic Circuits 236
5.6 Plastic Substrate Foil: TFT on Polyimide 244
5.7 3-D Integration on a Foil Substrate: OLED/TFT Pixel Elements on Steel 246
5.8 Outlook 249
References 250
6 Multijunction Solar Cells and Modules 252
Subhendu Guha
6.1 Introduction 252
6.2 Deposition Methods 254
6.2.1 Glow-Discharge Deposition Technique 254
6.2.2 Plasma Chemistry and the Growth Process 254
6.2.3 Factors that Influence Film and Cell Quality 256
6.3 Single-Junction Cells 258
6.3.1 Cell Structure 258
6.3.2 Cell Characteristics 259
6.3.3 Numerical Modeling 261
6.3.4 Light-Induced Degradation 264
6.4 High Efficiency Cells 268
6.4.1 Introduction 268
6.4.2 Multijunction Cell 269
6.4.3 Key Requirements for Obtaining High Efficiency 270
6.4.4 Back Reflector 270
6.4.5 Doped Layer 275
6.4.6 Intrinsic Layers 277
6.4.7 Optimization of the Component Cells and Current Matching 281
6.4.8 Tunnel Junction 282
6.4.9 Top Conducting Oxide 285
6.4.10 Cell and Module Performance 285
6.5 Manufacturing Technology 287
6.5.1 Manufacturing Process 287
6.5.2 Production Status and Product Advantage 293
6.6 Alternative Technologies and Future Trends 295
References 299
7 Multilayer Color Detectors 306
Fabrizio Palma
7.1 Introduction 306
7.1.1 Applications of a-Si:H Color Sensors 307
7.2 Optical Properties of Amorphous Silicon 308
7.2.1 Optical Properties of Amorphous Silicon Alloys 310
7.2.2 Optical Design of Layered a-Si:H Structures 312
7.3 Two-Color Sensors 315
7.3.1 Steady State and Transient Operation 317
7.3.2 SPICE Model of the Two Color Detector 319
7.4 Three-Color Sensors 320
7.4.1 Three Color Discrimination with Two Electrical Terminals 320
7.4.2 Adjustable Threshold Three Color Detector (ATCD) 323
7.4.3 Three Color Detectors in the Time Integration Regime 327
7.4.4 Mechanism of Autopolarization of the Stacked Cells 328
7.5 a-Si:H Based UV Sensors 332
7.5.1 Structure and Operation of the UV Detector 333
7.6 a-Si:H Based IR Sensors 334
7.6.1 IR Detection by Differential Photo-Capacitance 336
References 338
8 Thin Film Position Sensitive Detectors: From 1D to 3D Applications 342
Rodrigo Martins and Elvira Fortunato
8.1 Introduction and Historical Background 342
8.1.1 Why Use Amorphous Silicon to Produce Position Sensitive Detectors? 343
8.2 Principles of Operation of 1D and 2D PSD 346
8.2.1 The Different Types of PSD Devices That Can Be Produced 348
8.2.2 Different Types of a-Si:H TFPSD and the Production Processes Used 349
8.3 Physical Model for the Lateral Photo-effect in a-Si:H p-i-n 1D and 2D TFPSD 358
8.3.1 Introduction 358
8.3.2 General Description of the 1D Theoretical Model 359
8.3.3 Role of the Recombination Losses for the Fall-Off Parameter 362
8.3.4 Static Behaviour of E_y and phi_y 364
8.3.5 Role of rho_s and rho_{sd} for the Device Detection Limits, Linearity, and Spatial Resolution 365
8.3.6 Static Distribution of the Lateral Current 365
8.3.7 Extension of the Theoretical 1D Model to the 2D Case 367
8.3.8 Determination of the Transient Response Time of the TFPSD 368
8.4 Static and Dynamic Detection Limits 371
8.4.1 Static Detection Limits of 1D TFPSD 371
8.4.2 Linearity and Spatial Resolution of 1D TFPSD 372
8.4.3 Position Response to Multiple Light Beams 374
8.4.4 Static Predicted and Experimental Performance of the 2D TFPSD Device 376
8.5 Dynamic Performance of the 1D and 2D TFPSD 376
8.5.1 Response Time of the TFPSD 379
8.5.2 Detection of Light Signals with Different Wavelengths 381
8.6 Characteristics of the a-Si:H p-i-n Structures Used to Produce the TFPSD 383
8.6.1 JV Curves 383
8.6.2 Dependence of the Saturation Current of the Device on T 385
8.6.3 Spectral Response and Detectivity 386
8.7 Peripherals for 1D and 2D TFPSD Signal Processing 387
8.7.1 Optical Methods 387
8.7.2 Peripherals for Signal Processing 389
8.8 Simulated and Experimental Data in 2D Optical Inspection Systems with TFPSD Detector 392
8.9 Linear Array of Thin Film Position Sensitive Detector (LTFPSD) 393
8.9.1 Principles of the Optical Methods Used 394
8.9.2 Positional Resolution of the Array 395
8.9.3 Hardware to Control Arrays of Multiple 1D Sensors 396
8.9.4 Bandwidth Requirements for the Preamplifiers Used in the Hardware Control Unit of the LTFPSD 398
8.10 Summary and Future Outlook 399
References 400
Symbols and Abbreviations 404
Subject Index 411
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