Landolt-Brnstein Substance/Property Index 
III/41: Semiconductors 
(revised and extended contents of the volumes III/17 and III/22) 
Subvolume III/41A1: Group IV elements, IV-IV and III-V compounds 

General Introduction


List of substances 

Group IV elements and IV-IV compounds 

diamond (C) 
silicon (Si) 
germanium(Ge) 

III-V compounds 

boron nitride (BN) 
boron phosphide (BP) 
boron arsenide (BAs) 
boron antimonide (BSb) 
aluminum nitride (AlN) 
aluminum phosphide (AlP) 
aluminum arsenide (AlAs) 
aluminum antimonide (AlSb) 

Solid solutions between III-V compounds 

General remarks 

Bx Ga1-x N

Bx Ga1-x P

Bx Ga1-x AsAlx Ga1-x NAlx Ga1-x P

Alx Ga1-x AsAlx Ga1-x Sb

Alx In1-x PAlx In1-x AsAlx In1-x Sb

Gax In1-x NGax In1-x PGax In1-x AsGax In1-x Sb 

grey tin (a-Sn)
silicon carbide (SiC)
silicon-germanium mixed crystals (Six Ge1-x)


gallium nitride (GaN) 
gallium phosphide (GaP) 
gallium arsenide (GaAs) 
gallium antimonide (GaSb) 
indium nitride (InN) 
indium phosphide (InP) 
indium arsenide (InAs) 
indium antimonide (InSb) 

AlNx P1-x 
AlAs1-x Px 

GaNx P1-x 
GaNx As1-x 
GaPx As1-x 
GaPx Sb1-x 
GaAs1-x Sbx 
InPx As1-x 
InPx Sb1-x 
InAsx Sb1-x 
InBix As1-x 
InBix Sb1-x 
In1-x Sbx As 


Quaternary alloys of the type IIIx-III1-x-Vy-Vl-y 

General remarks 
Alx Ga1-x Asy Sb1-y 
Gax In1-x Asy P1-y 

Gax In1-x Asy Sb1-y 

Quaternary alloys of the type III1-x-y-IIIx-IIIy-V 

Alx Gay In1-x-y P 
Alx Gay In1-x-y As 
Alx Gay In1-x-y Sb 

Quaternary alloys of the type III-V1-x-y-Vx-Vy 

InAs1-x-y Sby Px 

Solid solutions between III-V and II-VI compounds 

(III-V)x (II-VI)1-x 

Solid solutions between III-V compounds and group IV elements 

(III-V)1-x IVx or (III-V)1-x IV2x 


Al(x)Ga(1-x)As 
band structure, energy gaps 
effective masses, deformation potentials and related parameters 
further band structure parameters 
lattice properties 
optical properties 
thermodynamic and structural data, impurities 
transport properties 
back to top 
Al(x)Ga(1-x)As(y)Sb(1-y) 
physical properties 
back to top 
Al(x)Ga(1-x)N 
physical data 
back to top 
Al(x)Ga(1-x)P 
physical data 
back to top 
Al(x)Ga(1-x)Sb 
electronic properties 
further properties 
back to top 
Al(x)In(1-x)As 
physical properties 
back to top 
Al(x)In(1-x)P 
Ordering effects 
physical properties 
back to top 
Al(x)In(1-x)Sb 
physical properties 
back to top 
Aluminum arsenide (AlAs) 
bulk modulus 
dielectric constants 
Grneisen parameters, phonon width and shift, eigenvectors, mean square displacements 
internal strain, effective charges 
lattice parameters, thermal expansion 
phase transition parameters 
back to top 


phonon dispersion, phonon wavenumbers and frequencies 
piezoelectric parameters, second- and third-order susceptibilities 
sound velocities, elastic moduli 
structure 
band structure 
band structure parameters, deformation potentials 
camel's back structure of the conduction band at X: 
carrier mobilities, Seebeck coefficient 
crystal structure, lattice parameters, thermal expansion 
Debye temperature, hardness, density, melting point 
effective masses 
elastic moduli, compliances and derived parameters 
electrical and thermal conductivity, carrier concentration 
energies of symmetry points of the band structure 
energy gaps 
exciton binding energy 
impurities and defects 
intra- and interband transition energies, spin-orbit splitting 
optical properties, refractive index, dielectric constants 
phonon dispersion, phonon wavenumbers 
sound velocities 
thermodynamical parameters 
AlAs(1-x)P(x) back to top 
physical properties 
Aluminum nitride (AlN) back to top 
bulk modulus, Young's and shear modulus 
dielectric constants 
Grneisen parameters, phonon line width and shift 
internal strain, effective charges, spontaneous polarization 
lattice parameters 
phase diagram, equation of state, phase transition parameters 
phonon dispersion curves, density of state 
phonon eigenvectors, mean square displacements 
phonon spectra, phonon wavenumbers 
piezoelectric constants, electromechanical coupling factor 
second- and third-order susceptibilities 
sound velocities, elastic moduli 
specific heat, thermal conductivity 
structure 
thermal expansion 
third-order elastic constants 
band structure 
crystal structure, lattice parameters, thermal expansion 


Debye temperature, density, hardness, melting point 
effective masses, valence band parameters 
effective masses, valence band parameters of the zincblende modification 
elastic moduli, bulk modulus 
electrical and thermal conductivity 
energies of symmetry points of the band structure, critical point energies 
energy gap 
hole mobility, piezoelectric strain coefficients 
interband trans. energies, def. potentials, crystal field, spin-orbit splitting 
optical properties, dielectric constants, refractive index 
phonon dispersion and wavenumbers, Grneisen parameters, eff. charge 
thermodynamical parameters, vaporization 
AlN(x)P(1-x) back to top 
physical properties 
Aluminum phosphide (AlP) back to top 
bulk modulus 
dielectric constants 
elastic moduli 
internal strain, effective charges 
lattice parameters, thermal expansion 
phonon dispersion, phonon frequencies, Grneisen parameters 
piezoelectric parameters, second- and third-order susceptibilities 
structure, phase transitions 
band gaps 
band structure, energies of symmetry points 
crystal structure, transition pressures 
Debye temperature, density, melting point 
effective masses 
elastic moduli, bulk modulus 
electrical and thermal transport 
impurities and defects 
lattice parameter 
optical properties, dielectric constants 
parameters of valence band 
phonon dispersion, phonon wavenumbers 
thermodynamical parameters, vaporization 
Grey tin (alpha-Sn) back to top 
bulk and shear modulus 
Debye-Waller factor 
elastic moduli 
high-frequency dielectric constant 
internal-strain parameter 


lattice parameters 
phase transition pressure and volume change 
phonon dispersion curves, density of states 
phonon frequencies and wavenumbers and related parameters 
structure, phase diagram, equation of state 
thermal expansion 
anisotropy parameters, g-factor of light electrons 
band structure 
critical point energies 
crystal structure, lattice parameter (pure Sn, Sn-IV alloys), thermal expansion 
Debye temperature, density, bulk modulus, heat capacity 
effective masses 
energies of symmetry points of the band structure 
impurities and defects 
interband transition energies 
intraband transition energies 
Luttinger parameters, deformation potentials 
magnetic properties 
optical properties, dielectric constant 
phonon frequencies, elastic moduli 
transport properties 

Aluminum antimonide (AlSb) back to top 
bulk modulus 
dielectric constants 
Grneisen parameters, phonon line width, phonon eigenvectors, mean square displacements 
internal strain, effective charges 
lattice parameters, thermal expansion 
phonon dispersion, phonon wavenumbers 
piezoelectric constants, second- and third-order susceptibilities 
sound velocities, elastic moduli 
structure, phase transitions 
band structure, energies of symmetry points 
carrier concentration, Hall scattering factor 
conduction band, camel's back structure and effective masses 
conduction band, effective masses 
core level energies 
critical point energies 
crystal structure of various phases 
Debye temperature, density, hardness, melting point 
deformation potentials 
elastic moduli, bulk modulus 
electrical and thermal conductivity 
electron loss, photoelectric threshold 
electron mobility 
energy gaps 


exciton binding energy 
further valence band parameter 
Grneisen parameters, effective charge 
hole mobility 
impurities and defects 
lattice parameter, thermal expansion 
magnetoresistance 
optical properties, dielectric constants 
phonon dispersion, phonon wavenumbers and energies 
piezo- and elastoresistance 
piezoelectric coefficients 
piezooptic and further optical parameters 
Seebeck and Nernst coefficient 
sound velocities 
spin-orbit splitting energies 
thermodynamical parameters, vaporization 
transitions involving core levels 
transport parameters near the melting temperature 
valence band, effective masses 
B(x)Ga(1-x)As back to top 
physical data 
B(x)Ga(1-x)N back to top 
physical data 
B(x)Ga(1-x)P back to top 
physical data 
Boron arsenide (BAs) back to top 
elastic moduli, bulk modulus 
internal strain, effective charge, dielectric constant, third-order susceptibility 
lattice parameters, thermal expansion 
phonon dispersion, phonon wavenumbers 
structure, phase transitions 
band structure 
crystal structure, density, Debye temperature 
thermodynamical data 
Boron nitride (BN) back to top 
bulk modulus 
dielectric constants 
effective charges 


elastic moduli 
Grneisen parameters, phonon line width, mean square displacements 
heat capacity, shock wave velocities 
lattice parameters 
linear thermal expansion, temperature dependence of lattice parameters 
phase diagram, equation of state 
phase transition data 
phonon dispersion curves and density of states 
phonon wavenumbers and frequencies 
piezoelectric parameters, third order susceptibility 
structure 
Young's modulus, internal strain 
band structure, hexagonal modification 
Debye temperature, heat capacity, density a. rel. parameters, hex. modification 
deformation potentials, cubic modification 
effective masses, electron affinity, cubic modification 
energy gap, effective masses, hexagonal modification 
energy gap, width of valence band and related data, cubic modification 
general remarks and band structure, cubic modification 
interband and core state transition energies, hexagonal modification 
lattice parameters, cubic modification 
melting point, Debye temperature density, entropy,etc., cubic modification 
normal pressure and high pressure phases 
optical properties, dielectric constant, cubic modification 
optical properties, dielectric constants, hexagonal modification 
phonon frequencies, elastic constants and related properties, hex. modification 
phonon wavenumbers, elastic and related parameters, cubic modification 
properties of rhombohedral BN 
properties of wurtzite-type BN 
structure of valence band, hexagonal modification 
structure, lattice parameter, thermal expansion, hexagonal modification 
thermodynamic parameters, vaporization, hexagonal modification 
transport properties, cubic modification 
transport properties, hexagonal modification 

Boron phosphide (BP) back to top 
bulk modulus 
dielectric constants 
elastic moduli 
Grneisen parameters, phonon eigenvectors, mean square displacements 
internal strain, effectice charges 
lattice parameters 
linear thermal expansion coefficient 
phonon dispersion, wavenumbers and frequencies 
piezoelectric constant, third-order susceptibility 
structure, equation of state, specific heat, phase transitions 


band structure, energy gap 
crystal structure, lattice parameters, thermal expansion 
Debye temperature, melting point, hardness 
deformation potentials 
elastic moduli, bulk a. shear modulus, mode Grneisen param., eff. charge 
electrical and thermal conductivity 
further transport properties 
higher energy optical transitions 
impurities and defects 
optical properties, dielectric constant 
phonon energies and wavenumbers 
thermodynamical properties 

Boron antimonide (BSb) back to top 
lattice parameters, phonon dispersion relation, phonon eigenvectors, bulk modulus 
physical properties 

Diamond (C) back to top 
bulk modulus 
critical-point frequencies 
elastic moduli 
electric field, pressure and strain dependences of phonon frequencies 
fourth-order elastic constants 
fourth-order phonoelastic constants 
Grneisen parameters 
high-frequency dielectric constant 
internal strain 
isotope dependence of lattice frequencies 
isotope dependence of the phonon density of states and of two-phonon spectra 
lattice parameters 
linear thermal expansion coefficient 
non-linear optical coefficients 
phase diagram, equation of state 
phase transition pressure, volume change 
phonon dispersion relations, phonon density of states 
phonon eigenvectors, mean square displacement, isotope effect of sound velocities 
phonon wave numbers and frequencies 
phonon wavenumbers and frequencies 
pressure, strain and isotope dependence of phonon width 
Raman frequencies, temperature dependence and frequency shift 
structure 
temperature dependence of phonon self energy, frequency dependence of the damping function 
third-order elastic constants 
third-order phonoelastic constants 
two-phonon density of states and second-order Raman and infrared spectra 


zone-center Raman phonon linewidth 
band structure 
Debye temperature, heat capacity, density, hardness, melting point and related data 
deformation potentials, electron-hole drop parameters 
effective masses 
elastic moduli 
elastooptic constants, further optical properties 
electrical and thermal conduction, transport properties 
energies of symmetry points of the band structure 
energy gaps 
exciton binding energy 
general characterization 
g-factor, valence band parameters 
Grneisen parameters, Poissons ratio, bulk modulus 
lattice parameters, thermal expansion 
magnetic properties 
normal pressure and high pressure phases 
phonon dispersion, phonon frequencies 
refractive index, dielectric constants 
sound velocity 
spin-orbit splitting, interband transition energies 
Ga(x)In(1-x)As 
Ordering effects 
physical properties 
back to top 
Ga(x)In(1-x)As(y)P(1-y) 
physical properties 
back to top 
Ga(x)In(1-x)As(y)Sb(1-y) 
physical properties 
back to top 
Ga(x)In(1-x)N 
physical properties 
back to top 
Ga(x)In(1-x)P 
electronic properties 
further properties 
Ordering effects 
back to top 
Ga(x)In(1-x)Sb 
physical properties 
back to top 


Gallium arsenide (GaAs) back to top 
bulk modulus, Young's and torsional modulus 
dielectric constants 
Grneisen parameters, phonon line shift and width 
internal strain, effective charges 
lattice parameters, thermal expansion 
phase transition parameters 
phonon dispersion, phonon spectra 
phonon lifetime, phonon eigenvectors, mean square displacements 
phonon wavenumbers and frequencies 
piezoelectric and elastooptic parameters, second- and third-order susceptibilities 
second- and third-order elastic moduli and compliances 
sound velocities, ultrasonic attenuation, phonon viscosity 
structure, phase diagram, equation of state 
absorption spectrum in the vacuum uv 
Auger effect 
band structure 
bulk, Young's and torsion moduli, internal strain 
camel's back structure of X6 conduction band minimum 
conduction band effective masses and related parameters 
core level binding energies, photoionization cross-sections 
core level energies 
crystal structure, phases 
data from electron loss, yield and X-ray emission spectroscopy 
data from photoelectron spectroscopy (ESCA) 
data from Raman spectra 
Debye temperature, density, heat capacity, melting point 
deformation potentials 
dielectric constants 
direct energy gap 
elastic moduli 
elastoresistance coefficients 
electron drift velocity and diffusion coefficient 
electron mobility 
electron-two-phonon deformation potentials 
electrooptic constants, second and third order nonlinear susceptibilities 
energies of symmetry points of the band structure 
exciton ground and excited states 
further optical spectra 
Grneisen parameters, effective charge 
Hall scattering factor 
hole mobility and drift velocity 
indirect energy gap 
interband transition energies (critical point energies) 
intra- and interband transition energies 
intrinsic carrier concentration, electrical and thermal conductivity 
lattice parameter, thermal expansion 


magnetic properties 
magnetoresistance 
minority carrier transp., impact ioniz., carrier lifetimes, plasmon energy 
Nernst coefficient 
non-parabolicity and warping parameters 
optical constants 
other parameters related to conduction band minima, g-factors 
phonon dispersion, phonon frequencies and wavenumbers 
photoemission data 
piezoelectric constants 
piezooptic constants, piezobirefringence 
piezoresistance tensor coefficients 
reflectance, two-photon absorption 
refractive index, absorption index, absorption coefficients 
Schottky barriers 
Seebeck coefficient 
sound velocities 
spin-orbit splitting energies 
thermodynamical parameters, vaporization 
third order elastic moduli 
transport mechanisms 
typical data for semi-insulating GaAs 
valence band parameters 
valence bands, effective masses 
GaAs(1-x)Sb(x) back to top 
physical properties 
Gallium nitride (GaN) back to top 
bulk modulus 
dielectric constants 
elastic moduli 
Grneisen parameters 
internal strain, effective charges, spontaneous polarization 
lattice parameters, thermal expansion 
mean square displacements, sound velocities 
phase diagram, equation of states, phase transitions 
phonon dispersion, density of states, Raman and infrared spectra 
phonon wavenumbers and frequencies 
phonon width and shift, phonon eigenvectors 
piezoelectric constants 
second and third order susceptibilities 
structure 
band structure 
crystal structure, lattice param., thermal expansion, high pressure phases 


Debye temperature, melting point, density 
effective masses, g-factors, deformation potentials 
electrical and thermal conductivity, electron concentration 
enery gap, exciton binding energy 
interband transition and splitting energies 
magnetic properties 
mobilities, Seebeck effect 
optical properties, dielectric constant 
phonon data, elastic moduli, Grneisen and rel. parameters 
thermodynamical parameters, vaporization 
GaN(x)As(1-x) back to top 
physical properties 
GaN(x)P(1-x) back to top 
physical properties 
Gallium phosphide (GaP) back to top 
bulk modulus, Young's and torsional modulus 
dielectric constants 
Grneisen parameters, phonon eigenvectors, mean square displacements 
internal strain, effective charges 
lattice parameters, thermal expansion 
phase transition parameters 
phonon dispersion, density of states 
phonon frequencies and wavenumbers 
phonon self energy, phonon line shift and width 
piezoelectric and electrooptic parameters, second- and third-order susceptibility 
sound velocities, second- and third-order elastic moduli 
structure, equation of state, specific heat 
band structure 
bulk modulus, mode Grneisen parameters and related data 
camel's back structure of conduction band, effective masses 
conduction and valence band, effective masses 
critical points of phonon dispersion curves 
crystal structure of various phases 
data from angle integrated photoemission 
Debye temperature, density, hardness, heat capacity 
deformation potentials 
direct energy gap 
elastic moduli 
electron concentration and mobility 
energies of symmetry points of the band structure 
energy gaps, temperature and pressure dependence 
exciton ground state 


further optical properties 
hole concentration and mobility 
indirect band gaps 
interband transition and splitting energies 
lattice parameter, thermal expansion, Grneisen parameters 
magnetic properties 
magnetoresistance, Seebeck coefficient 
minority carrier and positron lifetimes, plasmon energy 
optical constants 
optical properties involving core level transitions 
phonon dispersion, phonon frequencies 
piezoelectric coefficients 
pressure dependence of elastic moduli 
refractive index, absorption, reflection, dielectric constants 
second order nonlin. dielectric susceptibilities, birefringence, etc. 
sound velocities 
thermodynamical data, vaporization 
third order elastic moduli 
transport mechanisms, electrical and thermal conductivity 
transverse effective charge 
valence band parameters 
Young's moduli and torsional modulus 
GaP(x)As(1-x) back to top 
physical properties 
GaP(x)Sb(1-x) back to top 
physical properties 
Gallium antimonide (GaSb) back to top 
bulk modulus, Young's and shear modulus 
dielectric constants 
elastic moduli 
Grneisen parameters, phonon line width and eigenvectors, mean square displacements 
internal strain, effective charges 
lattice parameters, thermal expansion 
phase diagram, equation of state, phase transitions 
phonon dispersion, wavenumbers and frequencies 
piezoelectric parameters, second- and third-order susceptibilities 
sound velocity, ultrasonic attenuation 
structure 
absorption spectrum in the vacuum uv 
Auger coefficient 
band structure, energies of symmetry points 
bulk modulus 


conduction band splitting by strain 
conduction band, effective masses 
critical point effective mass, spin-orbit splitting valence band 
critical point energies 
crystal structure, high-pressure phases 
data for the L and X conduction band minima 

data from angle integrated photoemission 
Debye temperautre, density, hardness, melting point 
deformation potentials 
dielectric constants 
direct energy gap 
effective charge 
elastic moduli 
elastoresistance coefficients 
electron loss and yield spectroscopy 
electron mobility 
exciton ground state 
Hall scattering factor 
heavy and light hole mobilities 
higher band-band transitions (critical point energies) 
higher conduction band minima, energy difference to lowest minimum 
hole mobility 
intrinsic carrier concentration, resistivity 
lattice parameter, thermal expansion 
magnetic properties 
magnetoresistance 
mode Grneisen parameters 
Nernst coefficient 
optical properties, optical constants 
phonon dispersion, phonon frequencies 
photoel. threshold, core levels, photoionization cross section 
piezooptic constants, dependence of phonons on uniaxial stress 
piezoresistance tensor coefficients 
refractive index, absorption index and coefficient 
Schottky barriers 
second order nonlinear dielectric susceptibilities 
Seebeck coefficient 
spin-orbit splitting energies 
structure of conduction band minimum and valence band maximum 
thermal conductivity 
thermodynamical parameters 
third order elastic moduli 

transport mechanisms 
valence band parameters 
valence band, effective masses 


Germanium (Ge) back to top 
bulk modulus 
elastic moduli 
high-frequency dielectric constant 
internal strain 
lattice parameters 
mean square displacements 
mode Grneisen parameters 
phase diagram, equation of state 
phase transition pressure and volume change 
phonon dispersion relations, density of states 
phonon shift and width 
phonon wavenumbers and frequencies 
photoelasticity 
Raman phonon frequencies and wavenumbers 
sound velocities, ultrasound attenuation 
structure 
thermal expansion 
third-order elastic moduli 
third-order susceptibility 
band structure 
conduction band, effective masses 
critical point energies 
crystal structure of the various modifications 
data from Raman measurements 
Debye temperature, density, hardness, melting point, heat capacity 
deformation potentials 
dielectric constant 
direct and optical energy gap 
effective number of free electrons 
elastic moduli 
elastoresistance coefficients 
electron mobility 
electrostriction coefficients 
energies of symmetry points of the band structure 
energy of phonon modes in amorphous samples 
exciton data 
g-factor of electrons 
g-factor, spin-orbit split-off band 
Hall scattering factor 
heats of fusion and sublimation, enthalpy and entropy, vapor pressure 
higher band-band transitions (critical point energies) 
hole mobility 
indirect energy gap 
intrinsic carrier concentration 
lattice parameter, thermal expansion 
magnetic properties 


magnetoresistance 
optical constants 
optical properties involving core level transitions 
optical spectra 
phonon dispersion, phonon frequencies 
phonons participating in indirect transitions 
piezooptic and elastooptic constants, birefringence 
piezoresistance coefficients 
plasma energy of valence electrons 
positron lifetime in Ge 
reduced interband masses at critical point transitions 
refractive index 
Schottky barrier heights 
Seebeck and Nernst coefficients 
sound velocities 
spin-orbit splitting energies 
stopping power for electron energy loss 
strain and field dependence of hole mobility 
thermal conductivity 
third order elastic moduli 
third order susceptibilities 
transport mechanisms, conductivity 
transport properties in liquid Ge 
valence band parameters 
valence band, effective masses 
warm electrons, electron drift velocity 
Young's, torsion and bulk moduli, Grneisen parameters 
In(1-x)Sb(x)As 
Ordering effects 
back to top 
In(1-x-y)Al(x)Ga(y)As 
physical properties 
back to top 
In(1-x-y)Al(x)Ga(y)P 
physical properties 
back to top 
In(1-x-y)Al(x)Ga(y)Sb 
physical properties 
back to top 
Indium arsenide (InAs) 
bulk modulus 
dielectric constants 
back to top 


elastic moduli and compliances 
internal strain, effective charges 
lattice parameters, thermal expansion 
phonon dispersion, phonon spectra, phonon wavenumbers 
phonon line width and eigenvectors, Grneisen parameters, mean square displacements 
piezoelectric parameters, nonlinear susceptibilities 
sound velocities and attenuation 
structure, phase transition parameters 
absorption spectra in the vacuum uv 
band structure, energies of symmetry points 
carrier concentrations 
carrier mobilities, Hall scattering factor 
conduction band, effective masses 
crystal structure, high pressure phases 
data from angle integrated photoemission 
data from Raman spectroscopy 
Debye temperature, density, hardness, melting point 
deformation potentials 
dependence of phonons on uniaxial stress 
dielectric constants 
elastic moduli 
electrical and thermal transport 
electron g-factor, camel's back structure at conduction band edge 
electron loss, yield and X-ray emission spectroscopy 
energy gap, exciton data 
higher band-band transitions 
lattice parameter, thermal expansion 
magnetic properties 
magnetoresistance 
mode Grneisen parameters, effective charge 
Nernst and Righi-Leduc coefficients 
optical constants 
phonon dispersion, phonon wavenumbers 
photoelectric threshold, binding energies of core levels 
piezooptic constants, piezobirefringence 
piezoresistance and piezoelectric constants 
recombination and generation, lifetimes 
refractive and absorption index, reflectance 
second order nonlinear dielectric susceptibility 
Seebeck coefficient 
sound velocities 
spin-orbit splitting energies 
thermodynamical parameters, vaporization 
valence band parameters 
valence band, effective masses 


InAs(1-x-y)Sb(y)P(x) 
physical properties 
back to top 
InAs(x)Sb(1-x) 
physical properties 
back to top 
InBi(x)As(1-x) 
physical properties 
back to top 
InBi(x)Sb(1-x) 
physical properties 
back to top 
Indium nitride (InN) 
bulk modulus 
dielectric constants 
elastic moduli 
Grneisen parameters, phonon line width 
internal strain, effective charges, spontaneous polarization 
lattice parameters, thermal expansion 
phonon dispersion, phonon wavenumbers and frequencies 
piezoelectric parameters, third-order susceptibility 
structure, phase transitions 
density, melting point, thermodynamical parameters, vaporization 
electronic properties 
lattice properties 
magnetic properties 
optical properties, dielectric constants 
transport properties 
back to top 
Indium phosphide (InP) 
bulk modulus 
dielectric constants 
Grneisen constants, phonon eigenvector, mean square displacements 
lattice parameters, thermal expansion 
phonon dispersion and density of states, phonon-plasmon modes 
phonon frequencies and wavenumbers 
piezoelectric parameters, second- and third-order susceptibilities 
shear moduli, internal strain, effective charges 
sound velocities, elastic moduli 
structure, phase transition parameters 
absorption spectrum in the vacuum uv 
band structure, energies of symmetry points 
bulk and shear moduli 
conduction band, effective mass 
back to top 


crystal structure, high pressure phases 
data from angle integrated photoemission and Auger spectra 
data from Raman spectroscopy 
Debye temperature, density, hardness 
deformation potentials 
dielectric constants 
elastic moduli 
electrical and thermal conductivity, carrier concentrations 
electron drift velocity, impact ionization rates 
electron g-factor 
electron mobility 
electron-two-phonon deformation potential 
energy gap 
exciton states and parameters 
Grneisen constant and parameters 
Hall scattering factor, magnetoresistance 
hole and positron lifetimes, plasmon dispersion 
hole mobility 
interband transition and splitting energies 
intraband transition energies 
lattice parameter, thermal expansion 
magnetic properties 
optical constants 
phonon dispersion and frequencies 
piezooptic constants, piezobirefringence 
piezoresistance tensor coefficient 
pressure dependence of dynamical parameters 
refractive and absorption index, reflectance 
Schottky barrier heights 
second order nonlinear dielectric susceptibilities 
Seebeck and Nernst coefficients 
sound velocities 
temperature, pressure and concentration dependence of energy gaps 
thermodynamical parameters, vaporization 
third order elastic moduli 
transport mechanism 
transverse effective charge 
valence band parameters 
valence band, effective masses 
X-ray emission, photoelectric threshold, binding energies of core levels 
InP(x)As(1-x) back to top 
physical properties 
InP(x)Sb(1-x) back to top 
physical properties 


Indium antimonide (InSb) back to top 
bulk modulus 
dielectric constants 
elastic moduli and compliances 
electromech. coupling coeff., piezoelectric parameters, second- and third-order susceptibility 
Grneisen parameters, internal strain, effective charges 
Grneisen parameters, phonon line width and shift, eigenvectors, mean square displacements 
lattice parameters, thermal expansion 
phase transitions 
phonon dispersion, phonon wavenumbers and frequencies 
sound velocity, sound attenuation, phonon viscosity 
structure 
absorption spectra in the vacuum uv 
band structure 
broadening parameters at crit. points, press. and temperature coeff. 
bulk modulus 
carrier concentrations 
conduction band, effective masses 
crystal structure, high pressure phases 
data from angle resolved photoemission 
data from Raman spectroscopy 
Debye temperature, density, hardness, melting point 
deformation potentials 
dielectric constants 
effective mass and g-value at critical points 
elastic moduli 
elastoresistance coefficients 
electrical and thermal transport 
electromechanical coupling coefficient 
electron g-factor 
electron loss, yield and X-ray emission spectroscopy 
electron mobility 
energies of symmetry points of the band structure 
energy gap 
exciton ground state 
Hall scattering factor 
higher band-band transitions 
hole mobility 
impact ionization and recombination rates, Auger recombination 
lattice parameter, thermal expansion 
magnetic properties 
magnetoresistance, piezoresistance 
mode Grneisen parameters, effective charge 
Nernst, Righi-Leduc and Ettinghausen coefficients 
optical constants 
phonon dispersion and frequencies 
photoelectric threshold, binding energy of core levels 


piezoelectric constants 
piezooptic constants, piezobirefringence 
recombination and positron lifetimes, plasmon energy 
refractive and absorption index, reflectance 
Seebeck coefficient 
sets of Kane band parameters (valence band parameters) 
sound velocities 
spin-orbit splitting energies 
thermodynamical data, vaporization 
third order elastic moduli 
transition pressure to ?-Sn structure 
two-photon absorption, third order susceptibility 
valence band, effective masses 

Silicon (Si) back to top 
anharmonicity parameter of the LTO mode 
critical point wavenumbers and phonon frequencies 
elastic moduli of other Si modifications 
elastic moduli of Si-I 
elasto-optic (photoelastic) coefficients 
fourth-order elastic constants of Si-I 
high-frequency dielectric constant 
internal strain 
lattice parameters 
mean square displacements 
mode Grneisen parameters 
phase diagram, equation of state 
phase transition pressure and volume change 
phonon dispersion relations 
phonon line widths and related parameters 
phonon wavenumbers and frequencies 
pressure dependence of elastic moduli of Si-I 
pressure dependence of phonon wavenumbers and frequencies 
Raman frequencies, dependence on various parameters 
sound attenuation, phonon viscosity tensor 
sound velocities 
structure 
thermal expansion 
third-order elastic constants of Si-I 
third-order susceptibility 
Young's modulus, torsion modulus, bulk modulus 
absorption index, absorption coefficient 
band structure 
carrier lifetimes, Auger coefficient, plasmons 
conduction band, effective masses 
data from Raman spectra 


Debye temperature, heat capacity, density, hardness, melting point 
deformation potentials 
direct gap 
electrical conductivity 
electron drift velocity, warm electrons, intervalley relaxation time 
electron mobility 
energies of symmetry points of the band structure 
exciton ground and related states, biexitons 
g-factor of electrons 
Grneisen parameters and related data 
Hall scattering factor 
higher band-band transitions (critical point energies) 
hole drift velocity and diffusion 
hole mobility 

i.r. and two-photon absorption, further optical parameters 
indirect energy gap 
internal strain, Young's, torsion and bulk moduli 
intrinsic carrier concentration 
lattice parameter, thermal expansion 
magnetic properties 
magnetoresistance 
normal and high pressure phases, liquid phase 
optical constants 
optical properties involving core level transitions 
phonon dispersion 
phonon frequencies 
piezo- and elastoresistance coefficients 
piezooptic constants 
plasma energy, energy loss 
reflectance, dielectric constants 
refractive index 
Schottky barrier heights 
second order elastic moduli 
Seebeck and Nernst coefficients 
sound velocities 
spin-orbit splitting energies, second indirect gap 
thermal conductivity 
thermodynamical parameters 
third order elastic moduli 
third order susceptibilities 
transport mechanism 
valence band parameters 
valence band, effective masses 
Si(x)Ge(1-x) back to top 
electronic, lattice, transport and opical properties 
thermodynamic properties 


Silicon carbide (SiC) back to top 
bulk modulus, Young's modulus, shear modulus 
effective charges 
elastic moduli 
high-frequency dielectric constant 
internal strain 
lattice parameters 
low-frequency dielectric constant 
mean square displacements 
mode Grneisen parameters 
non-linear low frequency susceptibility, third-order susceptibility 
phase transition pressure and volume change 
phonon dispersion relations, density of states 
phonon spectra, coupled phonon-plasmon modes 
phonon wavenumbers and frequencies 
piezoelectric and related constants 
Raman phonon wavenumbers 
sound velocity 
structure, equation of state 
thermal conductivity 
thermal expansion 
band structure, energy gaps 
carrier concentration, resistivity, mobilities 
crystal structure, unit cells, chemical bond, high pressure phases 
Debye temperature, density, hardness, melting point, thermodyn. functions 
dielectric constants, nonlinear optics 
effective masses 
electron drift velocity, breakdown field 
exciton binding energy, spin-orbit splitting and interband transition energies 
lattice parameters, thermal expansion 
magnetic properties 
mode Grneisen parameters, sound velocity, elastic moduli, etc. 
phonon dispersion, phonon frequencies and wavenumbers 
polytypes 
refractive index, absorption coefficient, optical spectra 
thermal conductivity 
valence band parameters, deformation potentials 
work function 
Solid solutions between III-V compounds and group IV elements: (III-V)(1x)IV(x,2x) back to top 
data 
Solid solutions between III-V and II-VI compounds: (III-V)(x)(II-VI)(1x) back to top 
comparative table 


