Landolt-Brnstein Substance/Property Index 


III/41: Semiconductors 
(revised and extended contents of the volumes III/17 and III/22) 


Subvolume III/41A2: Impurities and defects in Group IV elements, 
IV-IV and III-V compounds 

General Introduction 
Measurement methods 
Trends of impurity and defect properties 

List of substances 

Group IV elements (Impurities and defects) 

diamond (C) 
silicon (Si) 
germanium(Ge) 

IV-IV compounds 

silicon carbide (SiC) 

III-V compounds 

boron nitride (BN) gallium phosphide (GaP) 
boron phosphide (BP) gallium arsenide (GaAs) 
aluminum nitride (AlN) gallium antimonide (GaSb) 
aluminum arsenide (AlAs) indium phosphide (InP) 
aluminum antimonide (AlSb) indium arsenide (InAs) 
gallium nitride (GaN) indium antimonide (InSb) 

Solid solutions between III-V compounds 

GaAs1-x Px Ga1-x Alx Sb 
GaAs1-x Sbx Gax In1-x P 
InAs1-x Px Ga1-x Inx As 
Ga1-x Alx As 

Quaternary alloys 

Gax Al1-x Asy Sb1-y 

Gax In1-x Asy P1-y 
(Gax Al1-x )y In1-y P 
(Gax Al1-x )y In1-y As 


Aluminum arsenide (AlAs) 
deep defect states 
shallow impurities and defects 
vibrational modes of impurities 
back to top 
Aluminum nitride (AlN) 
impurities and defects 
back to top 
Aluminum antimonide (AlSb) 
deep impurities 
shallow impurities 
vibrational modes 
back to top 
Boron nitride (BN) 
deep defect states in cubic boron nitride 
impurities in cubic and hexagonal boron nitride 
back to top 
Boron phosphide (BP) 
deep defect states 
back to top 
Diamond (C) 
impurities and defects, general characterization 
classification of diamond material by the nitrogen impurity properties 
binding energies of impurity levels 
nomenclature of defects 
data for defects 
paramagnetic centers, basic concepts 
EPR spectra A1-A11 
EPR spectra AB1-AB7 
EPR spectra Boron, E1, G1, KUL1-7, KY1 
EPR spectra L1, ME1, N1-7 
EPR spectra NE1-9 
EPR spectra NIRIM 1-NIRIM 8 
EPR spectra NL1, NOC1-4, NOL, O1-4 
EPR spectra OK1, P1-2, PA1 
EPR spectra R1-R18 
EPR spectra RM1, RO1, S1-4, TL1 
EPR spectra W1-W44 
further EPR spectra: Mu, Mu*, beta, V0 and others 
g-values and linewidths of paramagnetic centers in CVD diamond 
back to top 
Gallium aluminum arsenide (Ga(1-x)Al(x)As) 
deep defects 
optical properties of deep defects 
rare earth impurities 
shallow impurities and defects 
solubility and diffusion of impurities 
transition metal impurities 
back to top 


Gallium aluminum antimonide (Ga(1-x)Al(x)Sb) 
deep defect states 
back to top 
Indium gallium aluminum arsenide ((Ga(x)Al(1-x))(y)In(1-y)As) 
deep defects 
back to top 
Gallium aluminum indium phosphide ((Ga(x)Al(1-x))(y)In(1-y)P) 
deep defects 
back to top 
Gallium indium arsenide (Ga(1-x)In(x)As) 
defect levels, optical properties of impurities 
solubility and diffusion of impurities 
back to top 
Gallium aluminum arsenide antimonide (Ga(x)Al(1-x)As(y)Sb(1-y)) 
deep defects 
back to top 
Gallium indium arsenide phosphide (Ga(x)In(1-x)As(y)P(1-y)) 
impurities and defects 
back to top 
Gallium indium phosphide (Ga(x)In(1-x)P) 
defect levels 
rare earth impurities 
transition metal impurities 
back to top 
Gallium arsenide (GaAs) 
acceptor ground state binding energies 
binding energy of residual donors 
bound exciton lifetimes 
bound exciton transition energies 
calibration of local vibrational mode absorption lines 
capture and emission data for transition metal impurities 
diffusion of impurities and defects, general 
diffusion of Zn in GaAs 
electron traps (cross section not known) 
electron traps (directly measured carrier cross sections) 
electron traps induced by proton and heavy ion implantation 
energy levels of transition metal impurities 
energy splittings of excited acceptor states 
ESR data for shallow defects 
ESR, ENDOR, and ODMR data 
excited states related to transition metal impurities 
experimental results on the 0.67-0.68 eV photoluminescence band 
experimental results on the 0.77-0.8 eV photoluminescence band 
gallium vacancy 
heavy doping effects 
hole traps (cross section not measured) 
hole traps (directly measured cross sections) 
hole traps induced by proton and heavy ion implantation 
impurity diffusion coefficients 
intrinsic or unidentified deep defect states 
back to top 


low temperature grown GaAs 
magnetic properties and ESR of transition metal impurities 
magnetic properties of isolated, substitutional transition metal impurities 
magnetic properties of transition metal complexes 
optical bands related to the 78/203 meV acceptor 
optical properties of deep defects, general remarks 
optical properties of isolated transition metal impurities 
optical properties of transition metal impurity complexes 
optical transitions in absorption related to the EL2 defect 
oxygen and hydrogen in GaAs 
photoluminescence bands 
photoluminescence in n- and p-type GaAs 
photoluminescence of low temperature grown GaAs 
properties of acceptor excited states 
properties of fast-electron-irradiated GaAs 
properties of plastically deformed GaAs 
properties of rare earth impurities 
radiation-induced deep defect states: electron traps induced by electron irradiation 
radiation-induced deep defect states: hole traps induced by electron irradiation 
self-diffusion coefficients 
shallow acceptors: ground state binding energies, general remarks 
shallow defects and impurity complexes: copper complexes 
shallow defects and impurity complexes: the 1.5040-1.5110 eV photoluminescence lines 
shallow donors: chemical shifts, photoconductivity measurements and photoluminescence 
solubility of impurities 
the EL2/As(Ga) defect 
transition energies of highly excited acceptor states 
vibrational modes of impurities and defects: hydrogen complexes 
vibrational modes of impurities and defects: irradiation defects 
vibrational modes of impurities and defects: isolated impurities 
vibrational modes of impurities and defects: isotopic clusters 
vibrational modes of impurities and defects: lithium complexes 
vibrational modes of impurities and defects: substitutional impurity complexes 
Gallium arsenide phosphide (GaAs(1-x)P(x)) back to top 
deep defect states 
solubility and diffusion of impurities 
transition metal impurities 
Gallium arsenide antimonide (GaAs(1-x)Sb(x)) back to top 
deep defect states 
Gallium nitride (GaN) back to top 
esr and odmr data on hexagonal GaN 
luminescence peak energies 
properties of bound excitons 
properties of deep defect states 
shallow impurities 
solubility and diffusion of impurities 


Gallium phosphide (GaP) back to top 
binding energies of acceptors relative to the valence band maximum 
binding energies of donors 
bound excitons, general remarks 
deep defects, general remarks 
defect levels associated with transition metal impurities: capture and emission data 
defect levels associated with transition metal impurities: energy levels 
deformation potential of impurity states 
energies and capture cross sections of electron traps 
energies and capture cross sections of hole traps 
ESR and ENDOR data for shallow impurities 
ESR data of shallow acceptors 
ESR, ENDOR, and ODMR data: electron-irradiated GaP:Fe 
ESR, ENDOR, and ODMR data: gallium vacancy 
ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(3) Y 
ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(4) 
excited states of acceptors 
excited states of defects accociated with transition metal impurities 
excited states of donors 
excitons bound to isoelectronic substituents and other neutral centers, general remarks 
irradiation effects in rare earths doped GaP 
J-J coupling and crystal field splittings of bound excitons 
localization energies and splitting of excitons bound to acceptors 
localization energies and splitting of excitons bound to donors 
localization energies of bound excitons 
localization energies of multiple bound excitons 
magnetic properties and ESR of isolated, substitutional transition metal impurities 
magnetic properties and ESR of transition metal impurities complexes 
nitrogen-related electron traps in GaP 
optical properties of deep defects: luminescence bands 
optical properties of deep defects: optical absorption bands 
optical properties of isolated, substitutional transition metal impurities 
optical properties related to transition metal complexes 
properties of deep defect states induced by high energy irradiation 
properties of electron and hole traps induced by proton irradiation 
properties of rare earth impurities 
scattering cross-sections s for the no-phonon creation of free excitons 
shallow impurities, general remarks 
solubility and diffusion of impurities 
spin-orbit coupling in bound hole states 
splittings of 1S donor ground states 
transition lifetimes of bound excitons 
vibrational modes of hydrogen paired with impurity atoms 
vibrational modes of impurities and defects 
vibrational modes of irradiation defects 
vibrational modes of substitutional impurity complexes 
Gallium antimonide (GaSb) back to top 
bound excitons 
deep defects 
deep states introduced by donors 
diffusion of impurities and defects 


hole and electron traps 
radiation induced deep defect states 
shallow impurities and defects 
vibrational modes of impurities 
Germanium (Ge) 
solubility of impurities, general 
distribution coefficient of impurities, general 
solubility and segregation data of impurities: groups I-VIIIA 
solubility and segregation data of impurities: groups IB-VIIIB 
shallow donors binding energies 
shallow donor transition energies 
donor excited state binding energies 
valley-orbit splittings of ground states of shallow donors 
D-states binding energies Eb 
ground state energies of group VI substitutional donors 
shallow acceptors binding energies 
shallow single acceptor transition energies 
acceptor excited state binding energies 
deep centers, general characterization 
neutral double acceptor binding energies 
double acceptor ground state splitting 
singly ionized double acceptor binding energies 
transition energies for neutral double acceptors 
positively charged multiple acceptor binding energies 
energy levels of group I substitutional triple acceptors and related complexes 
energy levels of transition metal impurities 
energy levels of defect centers 
capture cross-sections of impurities 
photoionization cross-sections of impurities 
deformation potentials of impurities 
luminescence of bound excitons 
electron paramagnetic resonance data 
energies of local vibrational modes 
back to top 
Indium arsenide (InAs) 
deep defect states 
impurity diffusion coefficients 
magnetic properties of transition metal impurities 
self-diffusion coefficients 
shallow impurities 
solubility of impurities 
transition metal impurities 
vibrational modes of impurities 
back to top 
Indium arsenide phosphide (InAs(1-x)P(x)) 
solubility and diffusion of impurities 
back to top 


Indium phosphide (InP) back to top 
1 MeV electron irradiation-induced hole traps, measured by DLTS 
acceptor excited states 
capture and emission data of transition metal impurities 
data from photoconductivity measurements 
data from photoluminescence (I) 
data from photoluminescence (II) 
deep impurities, general 
deformation potentials for bound holes 
diffusion of impurities and defects 
energy levels of transition metal impurities 
ESR and ENDOR data: the electron g-factor 
ESR and ODMR data 
excited states of transition metal impurities 
exciton impurity transition lifetime 
intrinsic or unidentified deep defect states 
irradiation effects of rare earths impurities 
magnetic properties and ESR of transition metal impurities 
magnetic resonance of rare earths impurities 
optical properties of transition metal impurities 
photoluminescence and optical spectrometry of rare earth impurities 
properties of acceptor impurities 
properties of excitons bound to acceptors 
properties of rare earth impurities 
properties of the (D(+)X) exciton complex 
radiation-induced deep defect states 
shallow impurities and defects: general remarks 
vibrational modes of isolated impurities 

Indium antimonide (InSb) back to top 
binding energies of shallow impurities 
bound excitons 
deep impurities 
diffusion coefficients of impurities 
radiation-induced defect states 
self-diffusion coefficients 
transition metal impurities 
vibrational modes of substitutional impurities 

Silicon (Si) back to top 
paramagnetic centers, general remarks 
paramagnetic centers: summary of crystallographic systems and pointgroups 
paramagnetic centers: principal values and directions of the g-tensor 
paramagnetic centers: symmetry-imposed constraints on the elements of the Cartesian g-tensor 
paramagnetic centers: effective g-values 
paramagnetic centers: degeneracies of the elements of the g-tensor 
paramagnetic centers: number of resonances 
paramagnetic centers: principal values and orientations of g-tensors of triclinic centers 
paramagnetic centers: principal values and orientations of g-tensors of monoclinic-I centers 
paramagnetic centers: principal values and orientations of g-tensors of monoclinic-II centers 
paramagnetic centers: principal values of g-tensors of orthorhombic-I centers 


paramangetic centers: principal values of g-tensors of orthorhombic-II centers 
paramagnetic centers: principal values of g-tensors of tetragonal centers 
paramagnetic centers: principal values of g-tensors of trigonal centers 
paramagnetic centers: principal values of g-tensors of cubic centers 
vibrational modes of substitutional impurities 
vibrational modes of substitutional impurity complexes 
vibrational modes of oxygen in Si 
vibrational modes: fine structure due to silicon isotopes on 16O (i) absorption 
vibrational modes: experimental parameters of the Oi modes 
vibrational modes of interstitial impurity complexes 
vibrational modes due to irradiation defects, general 
vibrational modes: hydrogen atoms and molecules 
vibrational modes: hydrogen complexes with donor and acceptor dopants 
vibrational modes due to hydrogen paired with metallic impurities 
vibrational modes of hydrogen bonded to radiation damage defects 
vibrational modes:defect concentrations derived from the strengths of local absorption lines 
properties of oxygen-related defects and microdefects, classification of defects 
point defects: vacancies and interstitials 
point defects: equilibrium concentration and diffusivity for vacancies and interstitials 
point defects: atomic size effects of impurities 
point defects: solubility of impurities 
point defects: diffusivity of impurities 
point defects: oxidation effects 
point defects: carbon and oxygen 
point defects: other impurities 
aggregation phenomena 
precipitation 
microdefects: self-point microdefects (swirl defects) 
microdefects: oxygen-related microdefects 
microdefects not related to oxygen 
microdefects: oxidation-induced stacking faults 
microdefects: gettering and denuded zones 
solubility, segregation and distribution coefficients of impurities and defects, general 
solubility data of impurities: group IA 
solubility data of impurities: group IIA 
solubility data of impurities: group IIIB including rare earth elements 
solubility data of impurities: group IVB 
solubility data of impurities: group VB 
solubility data of impurities: group VIB 
solubility data of impurities: group VIIB 
solubility data of impurities: group VIII (iron group) 
solubility data of impurities: group VIII (cobalt group) 
solubility data of impurities: group VIII (nickel group) 
solubility data of impurities: group IB 
solubility data of impurities: group IIB 
solubility data of impurities: group VIII (group IIIA) 
solubility data of impurities and native point defects: group IVA 
solubility data of impurities: group VA 
solubility data of impurities: group VIA 
solubility data of impurities: group VIIIA 
distribution coefficients at the melting point 
ionization energies of impurity levels, general 


ionization energies and structural information on impurities: A-center-As4-Vac 
ionization energies and structural information on impurities: Au-Au-Vac 
ionization energies and structural information on impurities: B-B-Zn 
ionization energies and structural information on impurities: Be-Ce 
ionization energies and structural information on impurities: Co-Cr-Zn 
ionization energies and structural information on impurities: Cu-Fe-Zn 
ionization energies and structural information on impurities: Ga-Ge 
ionization energies and structural information on impurities: H-Hf 
ionization energies and structural information on impurities: Hg-Mg 
ionization energies and structural information on impurities: Mn-Ni 
ionization energies and structural information on impurities: O-Pd-H 
ionization energies and structural information on impurities: Pt-S-Vac 
ionization energies and structural information on impurities: Sb-Te-Se 
ionization energies and structural information on impurities: Th-Zr 
ionization energies: pressure coefficients of impurity levels 
capture coefficients and cross-sections of impurity levels, general 
capture coefficients and capture cross-sections for impurities and defects 
photoionization cross-sections of impurity levels 
excited bound states of acceptors and donors: acceptors of group III impurities, general 
excited bound states of acceptors and donors: group III acceptors and acceptor-X centers 
binding energies of even parity excited states of acceptors 
excited bound states of acceptors and donors: acceptors incorporating group II impurities 
excited bound states of acceptors and donors: donors of group V impurities and Li, general 
excited bound states of acceptors and donors: group V donors, Lii related donors, and Mgi 
binding energies of even parity excited states of donors 
excited bound states of acceptors and donors: donors of group VI impurities, general 
binding energies of ground and selected excited states of S-, Se-, and Te-related centers 
excited bound states of thermal donors (TDs): Oxygen-related defects, general 
binding energies Ei and IR absorption line energies of neutral thermal donors (TD0) 
binding energies Ei and IR absorption line energies of singly ionized thermal donors (TD+) 
excited bound states of shallow thermal donors (STDs) 
excited bound states of very shallow centers and deep transition metal defects 
excited bound states: acceptors of group II impurities 
excited bound states: pseudo-donors or pseudo-acceptors 
photoluminescence properties of impurities and defects, general remarks 
photoluminescence properties of excitons bound to neutral acceptors or donors 
photoluminescence data for bound excitons 
excitonic luminescence due to defects, mechanisms 
photoluminescence data on defect spectra 
photoluminescence data: supplementary data on optical defects 
photoluminescence data: hydrogen-related optical defects 
photoluminescence data: Er3+-related luminescence in silicon 
photoluminescence spectroscopy using radioactive isotopes 
further remarks to photoluminescence defect spectra 

Silicon carbide (SiC) back to top 
defects in SiC 
diffusion of impurities 
energy levels and capture cross sections, defect centers not identified 
energy levels and capture cross sections, identified defect centers 
general characterization 
impurities and defect levels, general 


optical properties of impurities and other defects: acceptors Al, Ga, B and Be 
optical properties of impurities and other defects associated with radiation damage, misc. defects 
optical properties of impurities and other defects: hydrogen 
optical properties of impurities and other defects: rare earth elements: erbium 
optical properties of impurities and other defects: shallow donors 
optical properties of impurities and other defects: transition metals 
solubility of impurities 
stacking order and number of inequivalent lattice sites in SiC 


