Index of Substances, List of Symbols and Abbreviations, Conversion factors 
Volume III/44A: New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds 
Occurring data listed by Element System 
El. System  Document Title [Author]  
Ag-Br  AgBr: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
 
AgBr: 
lattice 
constants 
[B. 
Hnerlage] 
 
AgBr: 
compressibility, 
bulk 
modulus 
[B. 
Hnerlage] 
 
AgBr: 
Debye-Waller 
factor 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
Ag-Cl  AgCl: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
 
AgCl: 
lattice 
constants 
[B. 
Hnerlage] 
 
AgCl: 
compressibility, 
bulk 
modulus 
[B. 
Hnerlage] 
 
AgCl: 
Debye-Waller 
factor 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
Ag-F  AgF: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
 
AgF: 
lattice 
constants 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
Ag-I  AgI, 
beta 
modi.cation: 
Debye-Waller 
factor, 
mean 
square 
relative 
displacements 
 
[B. 
Hnerlage] 
 
AgI: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
 
AgI: 
lattice 
constants 
[B. 
Hnerlage] 
 
AgI: 
phase 
transitions, 
p-T 
phase 
diagram 
[B. 
Hnerlage] 
 
AgI: 
compressibility, 
bulk 
modulus 
[B. 
Hnerlage] 
 
AgI: 
Debye-Waller 
factor 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
Al-As  AlAs: 
band 
structure, 
energies 
at 
symmetry 
points 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
energy 
gaps 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
interband 
transition 
energies 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
camels 
back 
parameter 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
spin-orbit 
splittings 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
Dresselhaus 
spin-splitting 
parameter 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
effective 
Land 
g-factors 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
effective-mass 
parameters 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
refractive 
index 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
dielectric 
constants 
[E.C. 
Fernandes 
da 
Silva] 
 
AlAs: 
mobility 
[E.C. 
Fernandes 
da 
Silva] 
 
Al-As-Ga  AlxGa1xAs: 
band 
structure 
[E.C. 
Fernandes 
da 
Silva] 
 
AlxGa1xAs: 
energy 
gaps 
[E.C. 
Fernandes 
da 
Silva] 
 
AlxGa1xAs: 
critical 
point 
energies 
[E.C. 
Fernandes 
da 
Silva] 
 
AlxGa1xAs: 
refractive 
index, 
absorption 
coef.cient 
[E.C. 
Fernandes 
da 
Silva] 
 
AlxGa1xAs: 
mobility 
[E.C. 
Fernandes 
da 
Silva] 
 
AlxGa1xAs: 
impact 
ionization 
coef.cients 
[E.C. 
Fernandes 
da 
Silva] 
 
Al-N  AlN: 
energy 
gaps 
[B.K. 
Meyer] 
 
AlN: 
critical 
point 
energies 
[B.K. 
Meyer] 
 
AlN: 
spin-orbit 
splittings, 
crystal-.eld 
splitting 
[B.K. 
Meyer] 
 
AlN: 
excitonic 
energy 
gaps, 
exciton 
binding 
energies 
and 
lifetime 
[B.K. 
Meyer] 
 
AlN: 
absorption, 
refractive 
index, 
dielectric 
function 
[B.K. 
Meyer] 
 
(continued)  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

El. System 	Document Title [Author] 
As-Ga 	GaAs: 
band 
structure, 
energies 
at 
symmetry 
points 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
interband 
transition 
energies 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
energy 
gaps 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
exciton 
linewidth 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
spin-orbit 
splittings 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
Dresselhaus 
spin-splitting 
parameter 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
effective-mass 
parameters 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
effective 
Land 
g-factors 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
refractive 
index 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
dielectric 
constants 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
resistivity 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
mobility, 
drift 
velocity 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
spin 
transport 
data 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
impact 
ionization 
coef.cients 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
photoemission 
data 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
Auger 
recombination 
coef.cient 
and 
lifetime 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
radiative 
recombination 
coef.cient 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
bound 
exciton 
data 
[E.C. 
Fernandes 
da 
Silva] 

GaAs: 
exciton 
.ne-structure 
[E.C. 
Fernandes 
da 
Silva] 
Br-Cl-Cu CuCl1xBrx: 
phonon 
wavenumbers 
[B. 
Hnerlage] 

CuCl1xBrx: 
electron 
mobility, 
drift 
velocity 
[B. 
Hnerlage] 
Br-Cu CuBr, 
gamma 
modi.cation: 
exciton 
energies 
[B. 
Hnerlage] 

CuBr, 
gamma 
modi.cation: 
Debye-Waller 
factor, 
mean 
square 
relative 
displacements 

[B. Hnerlage] 
CuBr, 
gamma 
modi.cation: 
spin-orbit 
splittings 
[B. 
Hnerlage] 
CuBr: 
elastic 
moduli, 
mode 
Grneisen 
parameters, 
effective 
charges 
[B. 
Hnerlage] 
CuBr, 
gamma 
modi.cation: 
electron 
mobility, 
drift 
velocity 
[B. 
Hnerlage] 
CuBr: 
phase 
transitions, 
p-T 
phase 
diagram 
[B. 
Hnerlage] 
CuBr: 
lattice 
constants 
[B. 
Hnerlage] 
CuBr: 
bulk 
modulus 
[B. 
Hnerlage] 
CuBr, 
gamma 
modi.cation: 
biexciton 
and 
trion 
data 
[B. 
Hnerlage] 
CuBr: 
phonon 
frequencies 
and 
wavenumbers, 
related 
data 
[B. 
Hnerlage] 
CuBr: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
I-VII-compounds: 
chemical 
bond 
[B. 
Hnerlage] 

Cl-Cu 	CuCl, 
gamma 
modi.cation: 
crystal 
structure, 
space 
group 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
band 
structure 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
deformation 
potentials 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
exciton 
energies, 
Rabi 
energies, 
oscillator 
strength 

[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
biexciton 
data 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
trion 
data 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
electron-hole 
plasma 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
thermal 
expansion 
coef.cient 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
phonon 
frequencies, 
phonon 
wavenumbers, 
damping 


constants 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
elastic 
moduli, 
effective 
charge 
[B. 
Hnerlage] 
CuCl, 
gamma 
modi.cation: 
Debye-Waller 
factors, 
mean 
square 
displacements 


[B. 
Hnerlage] 

CuCl: 
bulk 
modulus 
[B. 
Hnerlage] 




(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
El. System  Document Title [Author]  
Cl-Cu  CuCl, 
gamma 
modi.cation: 
dielectric 
constant 
[B. 
Hnerlage] 
 
CuCl, 
gamma 
modi.cation: 
conductivity, 
resistivity 
[B. 
Hnerlage] 
 
CuCl, 
gamma 
modi.cation: 
sublimation 
energy 
[B. 
Hnerlage] 
 
CuCl, 
gamma 
modi.cation: 
lattice 
constants 
[B. 
Hnerlage] 
 
CuCl, 
gamma 
modi.cation: 
mode 
Grneisen 
parameters 
[B. 
Hnerlage] 
 
CuCl, 
gamma 
modi.cation: 
exciton 
energies 
[B. 
Hnerlage] 
 
CuCl, 
gamma 
modi.cation: 
phonon 
wavenumbers 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
I-VII-compounds: 
chemical 
bond 
[B. 
Hnerlage] 
 
Cu-F  CuF: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
 
CuF: 
lattice 
constants 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
Cu-I  CuI, 
gamma 
modi.cation: 
exciton 
energies 
[B. 
Hnerlage] 
 
CuI: 
elastic 
moduli, 
mode 
Grneisen 
parameters, 
effective 
charges 
[B. 
Hnerlage] 
 
CuI: 
lattice 
constants 
[B. 
Hnerlage] 
 
CuI: 
bulk 
modulus 
[B. 
Hnerlage] 
 
CuI: 
phase 
transitions, 
p-T 
phase 
diagram 
[B. 
Hnerlage] 
 
CuI, 
gamma 
modi.cation: 
biexciton 
and 
trion 
data 
[B. 
Hnerlage] 
 
CuI: 
heat 
of 
sublimation 
[B. 
Hnerlage] 
 
CuI, 
gamma 
modi.cation: 
electron 
mobility, 
drift 
velocity 
[B. 
Hnerlage] 
 
CuI, 
gamma 
modi.cation: 
phonon 
wavenumbers 
[B. 
Hnerlage] 
 
I-VII-compounds: 
phases 
and 
lattice 
parameter, 
melting 
point 
[B. 
Hnerlage] 
 
I-VII-compounds: 
chemical 
bond 
[B. 
Hnerlage] 
 
Eu-Pb-S  Pb1xEuxS: 
crystal 
structure 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxS: 
photoemission 
data 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxS: 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxS: 
magnetic 
ion 
g-factor 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Eu-Pb-Se  Pb1xEuxSe: 
lattice 
parameter 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
energy 
gaps 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
band 
structure 
parameters 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
refractive 
index, 
absorption 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
dielectric 
constant 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
transmission 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
photoemission 
data 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
sp-f 
exchange 
integrals 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxSe: 
g-factor 
of 
magnetic 
ions 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Eu-Pb-Te  Pb1xEuxTe: 
band 
structure 
parameters 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
energy 
gaps 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
Debye-Waller 
factor 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
phonon 
wavenumbers 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
resistivity 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
mobility 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
phase 
coherence 
length 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
transmission 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
Verdet 
constant 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
photoemission 
data 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
sp-f 
exchange 
integrals 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
f-f 
exchange 
integrals 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
Curie 
temperature 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Pb1xEuxTe: 
magnetization, 
magnetic 
speci.c 
heat 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
(continued)  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

El. System 	Document Title [Author] 
Eu-Sn-Te 	Sn1xEuxTe: 
crystal 
structures 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
lattice 
parameter 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
resistivity 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
mobilities 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
transmission 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
exchange 
integrals 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xEuxTe: 
g-factor 
of 
magnetic 
ions 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

Fe-Ga-Se Ga1xFexSe: 
magnetization, 
magnetic 
anisotropy 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

Ga-Mn-S Ga1xMnxS: 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

Ga-Mn-Se Ga1xMnxSe: 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

Ga-N GaN, 
cubic 
modi.action: 
energy 
gaps 
[B.K. 
Meyer] 


GaN, 
cubic 
modi.cation: 
effective 
Land 
g-factors 
[B.K. 
Meyer] 

GaN, 
cubic 
modi.cation: 
dielectric 
function 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
energy 
gaps 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
exciton 
energies, 
pressure 
dependence 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
exciton 
g-factors 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
crystal-.eld 
splitting, 
spin-orbit 
splittings 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
effective-mass 
parameters 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
Hall 
mobility 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
diffusion 
coef.cient, 
diffusion 
length 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
carrier 
lifetimes 
[B.K. 
Meyer] 

GaN, 
hexagonal 
modi.cation: 
absorption 
coef.cient, 
dielectric 
constant 
[B.K. 
Meyer] 


Ge-Mn-Te 	Ge1xMnxTe: 
crystal 
structure 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
magnetoresistance 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
transmittance 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
Curie 
temperature 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
lattice 
parameter 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
energy 
gaps 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Ge1xMnxTe: 
effective-mass 
parameters 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

In-Mn-S In1xMnxS: 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

In-Mn-Se In1xMnxSe: 
magnetization, 
hysteresis 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

In-N InN, 
wurtzite 
modi.cation: 
band 
structure 
[B.K. 
Meyer] 


InN, 
wurtzite 
modi.cation: 
energy 
gaps 
[B.K. 
Meyer] 

InN, 
wurtzite 
modi.cation: 
critical 
point 
energies 
[B.K. 
Meyer] 

InN, 
wurtzite 
modi.cation: 
spin-orbit 
splittings, 
crystal 
.eld 
splitting 
[B.K. 
Meyer] 

InN, 
wurtzite 
modi.cation: 
effective-mass 
parameters 
[B.K. 
Meyer] 

InN, 
wurtzite 
modi.cation: 
mobility, 
diffusion 
coef.cients 
[B.K. 
Meyer] 

InN, 
wurtzite 
modi.cation: 
absorption, 
re.ectance, 
and 
photoluminescence 
[B.K. 
Meyer] 

InN, 
cubic 
modi.cation: 
band 
structure, 
energies 
at 
symmetry 
points 
[B.K. 
Meyer] 

InN, 
cubic 
modi.cation: 
energy 
gaps 
[B.K. 
Meyer] 

InN, 
cubic 
modi.cation: 
effective-mass 
parameters 
[B.K. 
Meyer] 


Mn-Pb-Se Pb1xMnxSe: 
energy 
gap 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Pb1xMnxSe: 
transmission, 
dielectric 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Mn-Pb-Sn-Te Pb1xySnyMnxTe: 
band 
structure 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Pb1xySnyMnxTe: 
Curie 
temperature 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

Mn-Pb-Te 	Pb1xMnxTe: 
structural 
phases 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Pb1xMnxTe: 
speci.c 
heat, 
thermal 
conductivity 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Pb1xMnxTe: 
phonon 
frequencies 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
El. System  Document Title [Author]  
Mn-Pb-Te Mn-Sn-Te  Pb1xMnxTe: 
micro 
hardness 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Pb1xMnxTe: 
thermoelectric 
power 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Pb1xMnxTe: 
magnetoresistance 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xMnxTe: 
structural 
phases, 
crystal 
structures 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xMnxTe: 
photoemission 
data 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Sn1xMnxTe: 
phase 
transition, 
magnetic 
anisotropy 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 

Volume III/44B: New Data and Updates for II-VI Compounds 
Occurring data listed by Element System 
El. System  Document Title [Author]  
Be-Mn-Te  Be1xMnxTe: 
hysteresis 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Be-O-Zn  BexZn1xO: 
lattice 
constant 
[B.K. 
Meyer] 
 
BexZn1xO: 
energy 
gaps 
[B.K. 
Meyer] 
 
Cd-Hg-Te  Hg1xCdxTe: 
phonon 
frequencies 
[J. 
Chu] 
 
Hg1xCdxTe: 
re.ectance, 
absorption 
[J. 
Chu] 
 
Hg1xCdxTe: 
binding 
energies 
(impurities 
and 
defects) 
[J. 
Chu] 
 
Cd-Mg-Se  CdxMg1xSe: 
exciton 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdxMg1xSe: 
conductivity, 
Hall 
mobility 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdxMg1xSe: 
refractive 
index, 
absorption, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
Cd-Mg-Se-Zn  MgxZnyCd1xySe: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Cd-Mg-Te  CdxMg1xTe: 
critical 
point 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdxMg1xTe: 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Cd-Mn-S  II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
Cd-Mn-Se  II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
Cd-Mn-Te  II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
Cd-O  CdO: 
transmission, 
photoemission 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdO: 
muonium 
data 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdO: 
photoconductivity, 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdO: 
thermoelectric 
power 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdO: 
mobility, 
Hall 
mobility 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Cd-O-Te  CdOxTe1x: 
composition 
dependence 
of 
energy 
gap 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Cd-O-Zn  ZnxCd1xO: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xO: 
lattice 
constants 
[B.K. 
Meyer] 
 
ZnxCd1xO: 
energy 
gaps 
[B.K. 
Meyer] 
 
ZnxCd1xO: 
band 
offsets 
[B.K. 
Meyer] 
 
ZnxCd1xO: 
re.ectance, 
absorption 
and 
photoluminescence 
[B.K. 
Meyer] 
 
Cd-S  CdS, 
zincblende 
con.guration: 
band 
structure, 
energies 
at 
symmetry 
points, 
gap 
energies 
 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdS, 
zincblende 
con.guration: 
Luttinger 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdS: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdS: 
exciton 
energies, 
exciton 
binding 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdS: 
muonium 
data 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdS: 
donor-acceptor 
pairs 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdS: 
ionization 
energies 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
(continued)  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

El. System 	Document Title [Author] 
Cd-S 	CdS: 
bound 
excitons 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS: 
conductivity, 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS: 
absorption 
coef.cient 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS: 
biexciton 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS: 
nonlinear 
optical 
properties 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS: 
mobility 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS: 
defect 
formation 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Cd-S-Se 	CdSxSe1x: 
band 
structure, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSxSe1x: 
absorption, 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSxSe1x: 
exciton 
energy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSxSe1x: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSxSe1x: 
excitonic 
energy, 
dephasing 
time 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Cd-S-Se-Zn 	ZnxCd1xSySe1y: 
band 
structure, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Cd-S-Te 	CdS1xTex: 
energy 
gaps, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS1xTex: 
absorption, 
dielectric 
constant 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdS1xTex: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Cd-S-Zn 	ZnxCd1xS: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnxCd1xS: 
conductivity, 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnxCd1xS: 
refractive 
index, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnxCd1xS: 
mobility 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Cd-Se 	CdSe, 
zincblende 
con.guaration: 
band 
structure, 
energies 
at 
symmetry 
points, 
gap 
energies 

[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
Luttinger 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe, 
hexagonal 
modi.cation: 
interband 
transition 
energies 
[J. 
Gutowski, 
K. 
Sebald, 


T. 
Voss] 
CdSe, 
hexagonal 
modi.cation: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
exciton 
energies, 
exchange 
splitting 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
muonium 
data 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
conductivity, 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
mobilities 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
nonlinear 
absorption 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
spin-orbit 
splitting, 
crystal-.eld 
splitting 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
g 
values 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSe: 
electron 
and 
hole 
traps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 



Cd-Se-Te 	CdSexTe1x: 
energy 
gaps, 
bowing 
parameter, 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 

T. Voss] 
CdSexTe1x: 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdSexTe1x: 
absorption, 
refractive 
index, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 

T. 
Voss] 

CdSexTe1x: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Cd-Se-Zn ZnxCd1xSe: 
energy 
gaps, 
g 
factor, 
splitting 
of 
exciton 
transitions 
[J. 
Gutowski, 
K. 
Sebald, 

T. Voss] 
ZnxCd1xSe: 
ionization 
energies, 
g 
values 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 

T. 
Voss] 

ZnxCd1xSe: 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Cd-Te CdTe, 
zincblende 
con.guration: 
band 
structure, 
energies 
at 
symmetry 
points, 
gap 
energies 

[J. Gutowski, 
K. 
Sebald, 
T. 
Voss] 
CdTe: 
Luttinger 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
El. System  Document Title [Author]  
Cd-Te  CdTe: 
energy 
gaps, 
temperature 
and 
pressure 
dependence 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
energies 
at 
symmetry 
points 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
critical 
point 
energies, 
temperature 
dependence 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
deformation 
potentials 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
exciton 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
ionization 
energies 
of 
shallow 
impurities 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
donor-acceptor-pairs 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
ionization 
energies 
of 
deep 
impurities 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
impurity 
complexes 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
defect 
formation 
energies, 
entropy 
of 
point 
defects, 
migration 
energy 
[J. 
Gutowski, 
 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
bound 
excitons 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
conductivity, 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
mobility 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
carrier 
concentration, 
self-diffusion 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
thermoelectric 
power 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
absorption 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
density 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
enthalpy, 
entropy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
hardness 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
Debye 
temperature 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
effective 
Land 
g 
factors 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
thermal 
conductivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
CdTe: 
muonium 
data 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Cd-Te-Zn  ZnxCd1xTe: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
ionization 
energies, 
free-to-bound 
transitions 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
ZnxCd1xTe: 
conductivity, 
mobilities, 
diffusion 
coef.cient 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
ZnxCd1xTe: 
refractive 
index, 
absorption, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
ZnxCd1xTe: 
Gibbs 
energy, 
enthalpy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
exciton 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
bound 
excitons 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
positron 
annihilation 
data 
at 
vacancy-impurity 
complexes 
(impurities 
and 
 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
electron 
and 
hole 
traps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
impurity 
complexes 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnxCd1xTe: 
segregation 
coef.cients 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
Co-O-Zn  Zn1xCoxO: 
Curie 
temperature, 
magnetization, 
exchange 
integral 
[T. 
Dietl, 
 
W. 
Dobrowolski, 
T. 
Story] 
 
Cr-Se-Zn  Zn1xCrxSe: 
Curie 
temperature 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Cr-Te-Zn  Zn1xCrxTe: 
Curie 
temperatures 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
 
Hg-Mn-S  II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
Hg-Mn-Se  II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
(continued)  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

El. System 	Document Title [Author] 
Hg-Mn-Te 	II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 

T. Story] 
Hg-Se HgSe: 
phonon 
dispersion 
curves, 
phonon 
density 
of 
states 
[J. 
Chu] 
Hg-Te HgTe: 
band 
structure 
[J. 
Chu] 

HgTe: 
energy 
gaps 
[J. 
Chu] 

HgTe: 
deformation 
potentials 
[J. 
Chu] 

HgTe: 
phonon 
dispersion 
curves, 
phonon 
density 
of 
states 
[J. 
Chu] 

HgTe: 
lattice 
parameter 
[J. 
Chu] 

HgTe: 
elastic 
coef.cients 
[J. 
Chu] 


Mg-O-Zn 	MgxZn1xO, 
hexagonal 
modi.cation: 
energy 
gaps 
[B.K. 
Meyer] 
MgxZn1xO, 
hexagonal 
modi.cation: 
exciton 
energies 
[B.K. 
Meyer] 
MgxZn1xO, 
hexagonal 
modi.cation: 
effective-mass 
parameters 
[B.K. 
Meyer] 
MgxZn1xO, 
hexagonal 
modi.cation: 
lattice 
parameters, 
phonon 
wavenumbers 
[B. 

K. Meyer] 
MgxZn1xO, 
hexagonal 
modi.cation: 
refractive 
index, 
dielectric 
constants 
[B.K. 
Meyer] 
MgxZn1xO, 
cubic 
modi.cation: 
energy 
gaps 
[B.K. 
Meyer] 
MgxZn1xO, 
cubic 
modi.cation: 
phonon 
wavenumbers 
[B.K. 
Meyer] 
MgxZn1xO, 
cubic 
modi.cation: 
refractive 
index, 
dielectric 
constants 
[B.K. 
Meyer] 

Mg-S-Se-Zn 	Zn1xMgxSySe1y: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxSySe1y: 
g 
values, 
impurity 
concentration 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxSySe1y: 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxSySe1y: 
electron 
and 
hole 
traps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Mg-S-Zn Zn1xMgxS: 
energy 
gap, 
effective-mass 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Mg-Se-Te-Zn MgyZn1yTe1xSex: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
MgyZn1yTe1xSex: 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Mg-Se-Zn Zn1xMgxSe: 
energy 
gaps, 
effective-mass 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxSe: 
g 
factors, 
electron 
and 
hole 
trap 
data 
(impurities 
and 
defects) 
[J. 
Gutowski, 

K. Sebald, 
T. 
Voss] 
Zn1xMgxSe: 
conductivity, 
mobility 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxSe: 
refractive 
index 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxSe: 
nonlinear 
absorption 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Mg-Te-Zn 	Zn1xMgxTe: 
energy 
gap, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxTe: 
bound 
exciton 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxTe: 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxTe: 
refractive 
index, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
Zn1xMgxTe: 
effective-mass 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Mn-O-Zn 	II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 

T. Story] 
Mn-O-Zn Zn1xMnxO: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 
Mn-S-Zn II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 

T. Story] 
Mn-Se-Zn II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 

T. Story] 
Mn-Te II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 

T. Story] 
Mn-Te-Zn II-VI 
semimagnetic 
semiconductors: 
exchange 
constants 
[T. 
Dietl, 
W. 
Dobrowolski, 

T. Story] 
Zn1xMnxTe: 
Curie 
temperature 
[T. 
Dietl, 
W. 
Dobrowolski, 
T. 
Story] 

(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
El. System  Document Title [Author]  
O-S-Zn  ZnS1xOx: 
exciton 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xOx: 
entropy, 
enthalpy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xOx: 
energy 
gaps, 
bowing 
parameter 
[B.K. 
Meyer] 
 
ZnS1xOx: 
lattice 
constant, 
phonon 
frequencies 
[B.K. 
Meyer] 
 
ZnS1xOx: 
absorption 
coef.cient 
[B.K. 
Meyer] 
 
O-Se-Zn  ZnSe1xOx: 
energy 
gaps, 
bowing 
parameter 
[B.K. 
Meyer] 
 
O-Sn  diluted 
magnetic 
oxides: 
Curie 
temperature, 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
O-Ti  diluted 
magnetic 
oxides: 
Curie 
temperature, 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
O-Zn  diluted 
magnetic 
oxides: 
Curie 
temperature, 
magnetization 
[T. 
Dietl, 
W. 
Dobrowolski, 
 
T. 
Story] 
 
S-Se-Zn  ZnS1xSex: 
energy 
gaps, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xSex: 
g 
values 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xSex: 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xSex: 
entropy, 
enthalpy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xSex: 
ionization 
energies 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xSex: 
effective-mass 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xSex: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
S-Te-Zn  ZnS1xTex: 
energy 
gaps, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xTex: 
impurity 
transitions 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xTex: 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xTex: 
bound 
exciton 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS1xTex: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
S-Zn  ZnS, 
cubic 
modi.cation: 
band 
structure, 
energies 
at 
symmetry 
points, 
gap 
energies 
 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
Luttinger 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
exciton 
energy, 
binding 
energy, 
Zeeman 
splitting 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
biexciton 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
energy 
gaps 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
exciton 
binding 
energies, 
absorption 
strength 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
ionization 
energies 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS, 
cubic 
modi.cation: 
heat 
conductivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
refractive 
index, 
absorption, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS: 
entropy 
and 
enthalpy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnS, 
cubic 
modi.cation: 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Se-Te-Zn  ZnSexTe1x: 
band 
gaps, 
bowing 
parameter 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSexTe1x: 
bound 
exciton 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSexTe1x: 
hardness 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSexTe1x: 
exciton 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSexTe1x: 
band 
offsets 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
Se-Zn  ZnSe: 
band 
structure, 
energies 
at 
symmetry 
points, 
gap 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
ZnSe: 
Luttinger 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSe: 
energy 
gaps, 
temperature 
and 
pressure 
dependence 
[J. 
Gutowski, 
K. 
Sebald, 
 
T. 
Voss] 
 
ZnSe: 
effective-mass 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSe: 
exciton 
energies, 
binding 
energy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
 
ZnSe: 
ionization 
and 
excitation 
energies 
of 
donors 
(impurities 
and 
defects) 
[J. 
Gutowski, 
 
K. 
Sebald, 
T. 
Voss] 
 
(continued)  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

El. System Document Title [Author] 
Se-Zn ZnSe: 
ionization 
and 
excitation 
energies 
of 
acceptors 
(impurities 
and 
defects) 
[J. 
Gutowski, 

K. Sebald, 
T. 
Voss] 
ZnSe: 
donor-acceptor 
pairs 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
deep 
impurities, 
muonium 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
electron 
and 
hole 
traps, 
formation 
energies, 
deep 
impurities 
[J. 
Gutowski, 
K. 
Sebald, 

T. Voss] 
ZnSe: 
bound 
excitons 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
heat 
conductivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
mobilities 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
refractive 
index, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
nonlinear 
optical 
properties 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
heat 
capacity, 
enthalpy, 
entropy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
hardness 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
shallow 
donor 
g 
values 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnSe: 
shallow 
acceptor 
g 
values 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

Te-Zn ZnTe: 
band 
structure, 
energies 
at 
symmetry 
points, 
gap 
energies 
[J. 
Gutowski, 
K. 
Sebald, 

T. Voss] 
ZnTe: 
Luttinger 
parameters 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
energy 
gaps, 
energies 
at 
symmetry 
points 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
deformation 
potentials 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
exciton 
energies, 
binding 
energies 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
ionization 
energies 
of 
shallow 
donors 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
donor-acceptor-pairs 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
ionization 
energies 
and 
impurity 
transitions 
of 
deep 
donors 
[J. 
Gutowski, 
K. 
Sebald, 

T. Voss] 
ZnTe: 
impurity 
complexes, 
positron 
lifetime 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
bound 
exciton 
data 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
resistivity 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
mobilities, 
diffusion 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
refractive 
index, 
dielectric 
constants 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
nonlinear 
optical 
properties 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
heat 
capacity, 
thermodynamic 
functions 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
Gibbs 
free 
energy 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
hardness 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
Debye 
temperature 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
density 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
spatial 
correlation 
(impurities 
and 
defects) 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 
ZnTe: 
melting 
point 
[J. 
Gutowski, 
K. 
Sebald, 
T. 
Voss] 

List of Symbols 
(lower indices i, j, k, l = 1,2,3 denote cartesian indices; indices I, J, K, L = 1,...,6 denote Voigt notation) 
Symbol a a a, b, c, d, d0,... ac (av) .a  Unit  eV  Property anisotropy factor independent component of Raman tensor deformation potentials conduction (valence) band deformation potentials screened deformation potential (continued)  
DOI: 10.1007/978-3-540-48529-2_2 # Springer 2008  Landolt-Brnstein New Series III/44A  

Symbol Unit 	Property 
a', b', d' eV deformation potentials of acceptors a, b, c , nm, pm lattice parameters aB nm Bohr radius A Hz, cm1 hyper.ne splitting parameter A eV electron-hole exchange interaction parameter AIJ third-order internal strain parameter A, B, C, A1,2,... h2/2m0 valence band parameters b eV bowing parameter b electron-hole mobility ratio (n/p) B T, G magnetic induction B cm3 s 1 radiative recombination coef.cient B eV, cm1 Racah parameter 
2K1 1
B cms Nernst coef.cient B 2,nm2 isotropic temperature parameter (Debye-Waller factor) Bij 2 anisotropic temperature parameter B0(B0 S , B0 T ) Pa, bar bulk modulus (adiabatic, isothermal) c mol1 concentration c phonon eigenvector modulus c eV bowing parameter of energy gap cIJ Pa, dyn cm2, elastic moduli (stiffnesses) 
Nm2 
D(E)
cIJ 	elastic moduli at constant electric displacement (electric .eld) 
(0)
cIJ 	elastic moduli for clamped crystal 
(S)
cIJ elastic moduli at constant entropy 
cIJK Pa third order elastic moduli 
cIJKL Pa fourth order elastic moduli 

C 	F electrical capacity 
C J mol1K1 heat capacity Cp heat capacity at constant pressure CV heat capacity at constant volume 
Cah 
anharmonic heat capacity 
Cqh 
quasiharmonic heat capacity 
c, cp, cV Jg1K1 speci.c heat capacity C cm6 s 1 Auger recombination coef.cient C Faust-Henry coef.cient C1,2,... (Ce, Ch) eV deformation potentials (of conduction and valence band) CA,B,C nm eV spin-splitting coef.cients 
G2 1
Cm cm Cotton-Mouton coef.cient d gcm 3 density 
ds,l,g density of solid, liquid and gaseous phase d m, cm,  distance, lattice spacing, interlayer spacing, thickness dopt optical density (log I0/I) diK CN1,mV1 piezoelectric strain coef.cients (see also giK; d14 also 
independent component of this tensor in zincblende 
lattices) dijk(2) mV1 second-order nonlinear dielectric susceptibility d(SHG), d.(OR) mV1, cmV1 SHG susceptibility, second harmonic generation 
coef.cient, optical recti.cation coef.cient (second order nonlinear dielectric susceptibilities) 
(continued) 
Landolt-Brnstein DOI: 10.1007/978-3-540-48529-2_2 New Series III/44A # Springer 2008 
Symbol Unit Property 
D cm 2 (electron) irradiation dose (see also F) 
D cm2 s 1 diffusion coef.cient 
Dn(p) diffusion coef.cient for electrons (holes) 
Da ambipolar diffusion coef.cient Dq, Dq eV, cm1 crystal .eld splitting parameter D, Df 1,2, Dg 1,2, eV cm1 deformation potential (inter-and intravalley coupling DGL, DGX, DLL,... constants) D1, Dik eV electron-two phonon deformation potentials Du, Du' eV deformation potentials for [100] and [111] stress, 
respectively e phonon eigenvector (eL, eT) e C elementary charge eP e piezoelectric charge e* e effective charge 
eS* e Szigeti effective charge 
eT* e Born (transverse) effective ion charge 
eL* e Callen (longitudinal) effective charge eiK Cm2 piezoelectric stress coef.cients (see also hiK; e14 
independent component of this tensor in zincblende 
lattices) E Pa, dyn cm2 Young's modulus 
E[hkl] Young's modulus measured in [hkl] direction E eV, J, Ry energy 
E0, Ec cohesive energy 
E0,1,2, E' 0, EL energies of critical points in optical spectra 
Ea(d) ionization energies of acceptors (donors), energy of 
acceptor (donor) state measured from the respective band 
edge 
Eax exciton absorption threshold 
EA activation energy (of conductivity or other temperature or 
pressure dependent properties) 
Eb binding energy (mostly of excitons) 
Ebiex energy of biexciton state 
Ebx binding energy of exciton to an impurity, localization 
energy of bound exciton 
Ebbiex biexciton binding energy 
Ebeh electron-hole plasma binding energy 
Ebmc binding energy of multiexcitons 
Ec high energy cut-off in e(E) spectrum 
Ec(v) band edge of conduction (valence) band 
ED activation energy of diffusion 
Ee exciton exchange energy 
Eel electron energy 
EF Fermi energy 
Eg energy gap, band gap 
.Egchem chemical contribution to Eg 
Eg,dir(ind) direct (indirect) energy gap 
Eg,opt optical energy gap (threshold energy for optical transitions) 
Eg,pseu pseudodirect energy gap 
Eg,th energy gap extrapolated to 0 K (thermal energy gap) 
(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
Symbol Unit 	Property 
Egx eV, J, Ry excitonic energy gap (see also Ex) Egxthr exciton absorption threshold Ei incident energy Ek kinetic energy EL energy loss Em migration (activation) energy EM biexciton transition energy (M band) En(k) band structure function Ena(pa) apparent ionization energy of electron (hole) traps Ep, Ep' characteristic energies in Kane's theory Epl plasmon energy Ep, EPL photoluminescence (photoconductivity) peak energy Er relative energy Er recombination center energy level Et energy of trap level Etot total energy (of crystal phase) Evac vacuum energy level Ex exciton energy (see also Egx) E1S,... energy of 1S,... exciton Ep, Es width of upper, lower valence band in BN, also plasmon 
peak energies 
EG, EX,... energy gap at G, X,... 
E(G6) energy of band edge of type G6 

.E eV width of valence band, energy splitting .Ehh(eh) hole-hole (electron-hole) splitting energy in acceptor bound exciton complexes .E(Vc) crystal .eld splitting energy in acceptor bound exciton complexes .EexL-T longitudinal-transverse exciton splitting energy (see also .LT) E Vcm1,Vm1 electric .eld strength 
Ec coercive .eld E1, E2 deformation potentials at X or L f Hz frequency fex free exciton oscillator strength fi (Phillips) ionicity, electronegativity f dyn Ŗ1, dyn cm1 force constant F valence band parameter g(E) eV1 cm 3 density of states g spectroscopic splitting factor 
geff, g* effective g-factor 
gc,e g-factor of conduction electrons 
gso g-factor in spin-orbit split valence band 
gv,h g-factor of conduction holes 
g g-factor of muon 

gij gyration tensor components 2C1
giK m 	piezoelectric strain coef.cients (see also diK; g14 independent component of this tensor in zincblende lattices) 
O1
G 	electrical conductance 
(continued) 
Landolt-Brnstein DOI: 10.1007/978-3-540-48529-2_2 New Series III/44A # Springer 2008 
Symbol Unit 	Property 
GL(T) Pa 	longitudinal (transverse) shear moduli 
G[hkl] shear modulus in [hkl] direction .G0T Jmol1 Gibbs free energy .G0f Jmol1 standard free energy of formation .Gtr Jmol1 free energy of transition h Planck constant h. eV photon energy, phonon energy hiK Vm1 piezoelectric stress coef.cients (see also eiK; h14 
independent component of this tensor in zincblende 
lattices) H Oe, A m1 magnetic .eld (strength), also given as 0H in Tesla (T) H Pa, kg mm2 hardness, microhardness 
HB,K,M,V 	Berkovitch or Brinell, Knoop, Mohs, Vickers hardness 
H(0) 
J mol1 (standard) enthalpy .Hat kcal mol1 enthalpy (heat) of atomization .Hf cal mol1, J mol1 enthalpy (heat) of formation .Hm J mol1, cal mol1 enthalpy (heat) of fusion or of melting .Htr Jmol1 enthalpy (heat) of transformation or of transition .Hv kcal mol1 enthalpy (heat) of vaporization 
i Am2 current density (see also j) I A electric current Iph photo current 
I m2 s 1 intensity (various units) I0 incident intensity Ilum luminescence intensity Ir(t) re.ected (transmitted) intensity Irel relative intensity IR Raman intensity 
j 	index designating the branches of the phonon dispersion 
curves j Am2 current density (see also i) J total orbital angular momentum quantum number J eV exchange interaction energy (J/kB in K) 
JNN(NNN) 	exchange interaction energies for nearest (next nearest) neighbors 
k extinction coef.cient (absorption index) ke absorption index for extraordinary ray ko absorption index for ordinary ray 
Ŗ111
k ,cm ,nm wavevector of electrons kc(v) location of conduction (valence) band k0 location of band edge in k-space 
kxyz anharmonicity parameter (of phonon mode) kB,k JK1 Boltzmann constant kiK electromechanical coupling factor K cm 1 absorption coef.cient (see also a) K anisotropy constant of ellipsoidal energy surfaces K cm 1 exciton wave vector (see also Q) KC Pa m1/2 fracture toughness K2 cmW1 two-photon absorption coef.cient 
(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
Symbol Unit Property 
ldr m drift length L, M, N valence band anisotropy parameters L(D),l(D) cm, m, nm length (carrier diffusion length) 
Ln(p,X) carrier diffusion length of electrons (holes, excitons) 
symmetry point of the Brillouin zone .L/L linear thermal expansion (.L/L vs.T) m, M g isotope mass 
m0 g electron mass mc m0 conductivity effective mass mds, mdos m0 density of states mass mex, Mm0 exciton mass mn(p) m0 effective mass of electrons (holes) mp,h(l), mh(l)h m0 effective mass of heavy (light) holes mso m0 effective mass in the spin-orbit split-off valence band m.c m0 effective cyclotron resonance mass" m.p m0 effective plasma frequency mass" m1,2,3 m0 effective mass in the three valence bands of tetrahedrally 
bonded lattices (identical with mp,h(l), mso) 
m.(||) m0 transverse (longitudinal) effective mass 
m(G6) m0 effective mass at band edge of type G6 
m* m0 effective mass 
mc* m0 effective cyclotron resonance mass 
m** m0 polaronic mass 

n (linear) refractive index na,b,c refractive index in a, b, c direction ne refractive index for extraordinary ray no refractive index for ordinary ray 
2W1
n2 cmnonlinear refractive index miK elastoresistance coef.cients .n birefringence ne  no n cm 3 electron concentration (also carrier concentration in 
general) na(d) acceptor (donor) concentration neff effective number of electrons contributing to optical 
properties 
ni intrinsic carrier concentration 
nimp impurity concentration 
nion ionized impurity concentration (see also NI) 
nl(h) concentration of light (heavy) electrons 
nt, Nt cm 3 defect concentration, trap density 

N coordination number N count rate N1 valence band parameter NI cm 3 ionized impurity concentration (see also nion) NC, NO cm 3 carbon, oxygen concentration p Pa, bar, atm, Torr hydrostatic pressure 
pIn partial pressure (of indium) 
ptr phase transition pressure 
pw working pressure 

(continued) 
Landolt-Brnstein DOI: 10.1007/978-3-540-48529-2_2 New Series III/44A # Springer 2008 
Symbol Unit Property 
p B magnetic moment pA magnetic moment per atom A peff effective (paramagnetic) moment pFU, pm magnetic moment per formula unit 
p cm 3 hole concentration pl(h) concentration of light (heavy) holes pIJ elastooptic tensor components (photoelastic coef.cients; 
see also qij) P(s) Cm2 (spontaneous) dielectric polarization P V Peltier coef.cient P Kcm3J1 Ettingshausen coef.cient P Wcm2 excitation density (also Iexc and I0 is used) P eV cm matrix element in Kane's theory PT linear dichroism of optical transmission 
Ŗ111
q ,cm ,nm wavevector of phonons, plasmons 
q Fano parameter 
qij Pa1 photoelastic constants (= dn/dXij, see also pIJ) 
qIJ piezooptic tensor components (see also pijkl) 
Q cm 1 exciton wave vector (see also K) 

Q1 
internal friction r nm,  (ionic) radius, distance rbi biexciton radius r s 2 coef.cient describing splitting of phonon frequency under 
uniaxial stress rij mV1 linear electrooptical constants (Pockels constants) R, RH eV Rydberg energy R re.ectivity, re.ectance R O resistance R JK1 mol1 gas constant R0 Hall scattering factor 
3C13C1
RH m,cmnormal Hall coef.cient sIJ Pa1 elastic compliances S spin quantum number S mV K1, VK1 Seebeck coef.cient (thermoelectric power) 
S(A) Seebeck coef.cient (of material A) 
Sn(p) Seebeck coef.cient for n-type (p-type) samples 

2V1 1
SR cms Righi-Leduc coef.cient 
S(0) 
J mol1K1 (standard) entropy (at 298.15 K) 
.Sat entropy of atomization 
.Sf entropy of formation 
.Sf cal mol1K1 entropy of fusion 
.Str Jmol1K1 entropy of transition 

t s, min, h, d time (annealing, aging, delay,...) T transmission T K, C temperature 
Ta annealing temperature 
Tb break temperature, boiling point 
Tc superconductor transition temperature 
TC Curie temperature 
Tcr critical temperature 

(continued) 
DOI: 10.1007/978-3-540-48529-2_2 Landolt-Brnstein # Springer 2008 New Series III/44A 
Symbol Unit Property 
Tdec K, C decomposition temperature Tf .ring temperature, freezing point Tg glass transition temperature Tm melting temperature TN Nel temperature Tp hot pressing temperature Tperit peritectic (decomposition) temperature Ts, Tsub substrate temperature Ttr crystallographic transition temperature T0 characteristic temperature in Mott's law of variable range 
hopping T1 s spin lattice relaxation time, exciton lifetime T2 s dephasing time of polariton, phonon or (bound) exciton, 
coherence time u, v, w internal crystal structural parameters <u2> m2,2 mean square displacement 
uaa-component of displacement 
U V voltage (see also V) UH Hall voltage Uph photovoltage 
2
Uij temperature factors (Debye-Waller exponents) 
. cm s 1,m s 1 sound velocity .dr, vD drift velocity .gr group velocity .l(t), L(T) longitudinal (transverse) sound velocity 
V deg T1 cm 1 Verdet coef.cient 
V V voltage (see also U) 

33
V(m) ,cm(molar) volume Va atomic volume V0 volume at zero pressure VX volume of phase (structure) X (e.g. X = d: diamond phase) 
V/V0 relative volume Vc eV crystal .eld potential x, y, z fractional coordinates of atoms in the unit cell (internal 
crystal structural parameters) x concentration xc cross over concentration X symmetry point in the Brillouin zone Xik Pa stress tensor (33) [in literature often labeled Tik] 
X[hkl] stress in [hkl] direction Y(ph) quantum (photo) yield Z deg dB1 .gure of merit Z atomic number number of formula units in unit cell a dB cm1 sound attenuation coef.cient a cm 1 absorption coef.cient (see also K) a cm3 electronic polarizability a eV T1 diamagnetic shift 
K1
a linear thermal expansion coef.cient aa,b,c linear thermal expansion coef.cient in a, b, c direction 
(continued) 
Landolt-Brnstein DOI: 10.1007/978-3-540-48529-2_2 New Series III/44A # Springer 2008 
Symbol Unit 	Property 
K1
aAC(BC) 	linear thermal expansion coef.cient along A-C (B-C) bonds 
aah 
anharmonic linear thermal expansion coef.cient 
aqh 
quasiharmonic linear thermal expansion coef.cient 
a.,|| 	linear thermal expansion coef.cients . and || to c-axis 
a 	deg eigenvector phase angle 
a 	cm 1 (impact) ionization coef.cient for electrons 
aF 	Frhlich polaron coupling constant 
a,  	eV exchange constants 
a, , . 	deg unit cell angles 
K1
 	volume thermal expansion coef.cient 
 (impact) ionization coef.cient for holes 2V2
 	cmwarm electron coef.cient 
 	eV K1 exciton phonon coupling constant 
2(3) 	cm W2 two(three)-photon absorption coef.cient (cm3 W2) 
. 	J mol1K2 coef.cient of electronic heat capacity 
. 	Grneisen parameter 
.1,2,3 	Luttinger parameters 
.j(q) 	mode Grneisen parameters 
.14 	piezoelectric constant 1) 
(0)
.14 	piezoelectric constant, clamped crystal 
G 	center of Brillouin zone 
G 	cm 1 damping function 
G 	Hz, cm1 linewidth (phonon) 
G 	eV broadening parameter 
d 	mm s 1 isomer shift 
d 	ppm chemical shift 
d 	deg (loss) angle 
d 	eV short range electron-hole interaction parameter 
d 	eV diamagnetic shift of impurity 
. 	symmetry axis in the Brillouin zone, [100]-axis in k-space 
. 	structural parameter 
. 	Hz, cm1 frequency shift, phonon shift 
. 	mm s 1 quadrupole splitting 
. 	eV electron-hole exchange energy 
.cf, .CF 	eV crystal .eld splitting energy (also d is used) 
.ex 	eV exciton exchange interaction energy 
.LT 	eV longitudinal-transverse exciton splitting energy (see also 
L-T).Eex 
.so, .0, .0 ' 	eV spin-orbit splitting energy at G 
.1(2), .1(2) ' 	eV spin-orbit splitting energy at L (X) 
e 	deg Faraday ellipticity 
e0 	Fcm1 permittivity of free space 
e = e1+ie2 dielectric constant eeff effective long-wavelength part of the dielectric constant eij components of dielectric constant tensor eL lattice part of the dielectric constant e(8), e8 high frequency limit of dielectric constant e(0), e0 static or low frequency dielectric constant 
(continued)  
DOI: 10.1007/978-3-540-48529-2_2  Landolt-Brnstein  
# Springer 2008  New Series III/44A  

Symbol Unit Property 
e1, e2 real, imaginary part of dielectric constants 
Im e1 energy loss function 
tan d dielectric loss tangent (e2/e1) 

eij strain tensor (see also .ij, in literature sometimes Sij) .e/p cm2 dyn1 piezobirefringence . reduced wavevector coordinate . internal strain parameter . quantum ef.ciency .ij strain tensor (see also eij, in literature sometimes Sij) .IJ P (phonon) viscosity tensor elements . deg (bond) angle . compensation ratio (= nd/na) .F deg cm1 Faraday rotation .K deg Kerr ellipticity TC K Curie temperature 
Ta asymptotic Curie temperature 
Tc ferroelectric Curie temperature 
Tp paramagnetic Curie temperature 

TD K Debye temperature . Pa1, bar1, compressibility (= 1/bulk modulus) 
cm2 dyn1 
.T compressibility at constant temperature 
.S compressibility at constant entropy 

. valance band parameter 
. Wm1K1 thermal conductivity .el electronic contribution to . .L lattice contribution to . 
. nm, m wavelength .0, .i optical isotropic wavelength . symmetry axis in the Brillouin zone 
2V1 1
 ms mobility of charge carriers a, b, c mobility in a, b, c direction dr drift mobility H Hall mobility imp mobility in impurity band n(p) electron (hole) mobility 
(ex) m0 reduced (exciton) effective mass B JT1 Bohr magneton . Hz frequency 
.0 escape frequency .R Raman frequency .TO(LO) frequency of transverse (longitudinal) optical phonon 
. Poisson's ratio . number of equivalent ellipsoidal band edges . Hz, s1 frequency 
.p plasma frequency h . eV photon energy, phonon energy 
.
, ./c cm 1 wavenumber 
.
R Raman wavenumber 
.
p plasma wavenumber 
(continued)  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

Symbol Unit 	Property 
.. 
cm 1 wavenumber shift ..
R Raman shift ..
B Brillouin shift 
. eV deformation potential .d diagonal component of deformation potential tensor .u deformation potential for pure shear 
pik cm2 dyn1 piezoresistance coef.cient pijkl piezooptic tensor components (see also qIJ) . O cm, O m resistivity 
.a, b, c resistivity in a, b, c direction 
.d(i) dark resistivity (. under illumination) 
.H,a anomalous Hall resistivity 

. 	deg mm1 speci.c rotation of the plane of polarization 
.(2) 	G1 
ik magnetoresistance tensor components ../.0 magnetoresistance s anisotropy parameter s cm2 capture cross section (of traps, impurity transitions,...) 
O11 1
s cm , O1m electrical conductivity sa, b, c conductivity in a, b, c direction sd dark conductivity si intrinsic conductivity sij conductivity tensor components sion ionic conductivity sn(p) electron (hole) contribution to the conductivity sph photoconductivity 
sm 	emu mol1, magnetic moment per mole = molar magnetization Gcm3 mol1 
O111
sopt cm ,s optical conductivity sT Pa tensile stress S symmetry axis in the Brillouin zone t s lifetime of phonons, relaxation time, decay time, rise time, 
lifetime of carriers, trapping time 
tD decay time 
tp lifetime of holes 

fK deg Kerr rotation angle F eV Schottky barrier height, work function 
Fn(p) Schottky barrier height for n-type (p-type) samples FA,B,C eV nm k-linear spin-splitting coef.cient of A,B,C excitons F electrons cm2 (electron) irradiation dose (in some cases as D) . magnetic susceptibility 
13 1
.g emu g ,cmg magnetic susceptibility per gram 
.m emu mol1, magnetic susceptibility per mole 
cm3 mol1 
.v magnetic volume susceptibility 

.(2) 
= .ijk esu,mV1 	second order nonlinear dielectric susceptibility (non-linear high-frequency susceptibility, ZnS structure) 
.(3) 
ijkl esu third order nonlinear dielectric susceptibility .. optical electronegativity . s 1, rps (= rad s1) angular (circular) frequency 
.c 	cyclotron resonance frequency 
(continued)  
DOI: 10.1007/978-3-540-48529-2_2  Landolt-Brnstein  
# Springer 2008  New Series III/44A  

Symbol Unit Property 
.Ds 1, rps (=rad s1) Debye frequency .k kink frequency .p plasma resonance frequency .q phonon frequency .TO(LO) frequency of transverse (longitudinal) optical phonon 
.. eV, meV photon energy ..ph, ..q eV, meV phonon energy OIJ second order phonoelastic constants [OIJ = d(ln .I)/d.J] OIJK third order phonoelastic constants [OIJK =d2(ln .I)/d.J 
d.K] OIJKL fourth order phonoelastic constants [OIJK =d3(ln .I)/d.J d.Kd.L] 
(0) +(eT*/e).,
1) De.ntion for III-V compounds (Voigt notation): .14 = .xyz =d.yz/dEx;(a2/e).14 =(a2/e).14 with strain component .yz, electric .eld component Ex, Born effective charge eT*, internal-strain parameter ., assuming the metal group-III ion at the origin and the group-V ion at a/4(1,1,1). The two terms are the electronic and ionic contributions, respectively. 
List of Abbreviations 
., ||  perpendicular, parallel to a crystallographic axis  
a  amorphous  
a, A (A0,A+)  acceptor (neutral, positively charged)  
A0X(D0X)  neutral acceptor (donor) bound exciton  
AAS  atomic absorption spectroscopy  
AC  alternating current  
ac  acoustic  
ADXRD  angular-resolved X-ray diffraction  
AES  atomic emission spectroscopy  
AF  triplet free exciton  
AF  antiferromagnetism, antiferromagnetic  
ah  anharmonic  
AL  longitudinal free exciton  
al, a  alloy (scattering)  
ALE  atomic layer epitaxy  
APW  augmented plane wave (method)  
arb  arbitrary  
ARPES  angle resolved photoemission spectroscopy  
ARUPS  angle resolved ultraviolet photoemission spectroscopy  
ASA  atomic sphere approximation  
av  average  
bcc  body centered cubic  
bct  body centered tetragonal  
BE, BX  bound exciton  
BEP  beam equivalent pressure  
BIS  bremsstrahlung isochromat spectroscopy  
BZ  Brillouin zone  
c  mostly as subscript: crystal(line), cubic or conduction band  
calc  calculated, calculation  
CARS  coherent anti-Stokes Raman scattering  
CB  conduction band  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

CBED CDW CEF cf 
CPA cr CT cub, c 
CuGa... CVD CVT d d, D DAG DAP dc DFT dhcp dir DLTS DOS dp DSC DTA e EBIC EDC EDX(RD) EELS EER eff EHD el ELNES EMF ENDOR EPR ESCA ESR ex ex, exc EXAFS exp F 
f.u. fcc FE fe, fx FIR FP-KKR FP-LAPW 
DOI: 10.1007/978-3-540-48529-2_2 # Springer 2008 
convergent-beam electron diffraction charge density wave crystal electric .eld crystal (electric) .eld cathodoluminescence coherent potential approximation mostly as subscript: critical charge transfer cubic Cu ion on Ga... site chemical vapor deposition chemical vapor transport diamond donor direct alloy growth donor acceptor pair direct current density-functional theory double hexagonal close-packed direct deep level transient spectroscopy density of states deformation potential (scattering) differential scanning calorimeter differential thermal analysis electron electron beam induced current electron distribution curve energy-dispersive X-ray diffraction electron energy loss spectrum electrolyte electrore.ectance effective electron-hole drop electronic electron-energy loss near edge structure electromotive force electron nuclear double resonance electron paramagnetic resonance electron spectroscopy for chemical analysis electron spin resonance exciton excitation, exciton extended X-ray absorption .ne structure experimental ferromagnetism, ferromagnetic formula unit face centered cubic ferroelectric free exciton far infrared full potential Korringa-Kohn-Rostoker (method) full potential linearized augmented plane wave (method) 
Landolt-Brnstein New Series III/44A 
FP-LCAO  full potential linear combination of atomic orbitals (method)  
FP-LMTO  full potential linearized muf.n-tin orbital (method)  
FT  fast-transverse  
FWHM  full width at half maximum  
g  gaseous  
GGA  generalized gradient approximation  
GGA-LCAO  LCAO with GGA  
GGA-LMTO  LMTO with GGA  
GW  denotes an approximation to the quasi-particle self energy  
h  hole  
hcp  hexagonal close-packed  
hex, h  hexagonal  
HF  Hartree-Fock  
HF-LCAO  Hartree-Fock linear combination of atomic orbitals (method)  
HF-LMTO  Hartree-Fock linearized muf.n-tin orbital (method)  
hh  heavy hole or hole-hole  
HP  hydrostatic pressure  
HPHT  high pressure / high temperature  
HRCVD  hydrogen radical-enhanced chemical vapor deposition  
HREELS  high resolution electron energy loss spectroscopy  
HRXD  high resolution X-ray diffraction  
HT  high temperature T > 300 K  
HVPE  halide vapor phase epitaxy  
HWE  hot wall epitaxy  
i  as subscript: interstitial (e.g. Ini: In on interstitial site), intrinsic, incident  
I  insulator  
ICDD  International Center of Diffraction Data  
ii  ionized impurity (scattering)  
ind  indirect  
inj  injection  
inv  inverse  
ion  ionic, ionization  
ir  irradiation  
IR  infrared  
ISOVPE  isothermal vapor phase expitaxy  
ITO  Indium-Tin-Oxide  
JT  Jahn Teller  
KK  Kramers-Kronig (analysis)  
KKR  Korringa-Kohn-Rostoker (method)  
KM  magnetic dense Kondo state  
L, l  mostly as subscript: longitudinal or lattice  
L, liq  liquid  
LA  longitudinal acoustic  
LAO, LOA  longitudinal acoustic and optical  
LAPW  linearized augmented plane wave (method)  
latt  lattice  
LCAO  linear combination of atomic orbitals (method)  
LCGO  linear combination of Gaussian orbitals (method)  
LDA  local density approximation  
LEC  liquid encapsulation Czochralski (growth)  
LED  light-emitting diode  
LEEBI  low energy electron beam irradiation  
Landolt-Brnstein  DOI: 10.1007/978-3-540-48529-2_2  
New Series III/44A  # Springer 2008  

lh  light hole  
lin  linear  
LMTO  linear combination of muf.n-tin orbitals (method)  
LMTO-ASA  linear combination of muf.n-tin orbital with atomic sphere approximation  
Ln  lanthanide  
LO  longitudinal optical  
LPE  liquid phase epitaxy  
LPP  longitudinal phonon-plasmon (wavenumber)  
LST  Lyddane-Sachs-Teller relation  
LT  low temperature, mainly < 10 K  
LTA  longitudinal and transverse acoustic  
LTMBE  low temperature molecular beam epitaxy  
LTO  longitudinal and transverse optical  
lum  luminescence  
m  as subscript: per mole, per molecule  
M, Me  metal; M sometimes also for molecule"  
magn  mostly as subscript: magnetic  
MAS  magic-angle spinning  
MBE  molecular beam epitaxy  
MD  molecular dynamics (calculation)  
MOCVD  metal organic chemical vapour deposition  
MOMBE  metal organic molecular beam epitaxy  
mon  monoclinic (mostly subscript)  
MOVPE  metal organic vapor phase epitaxy  
MREI  modi.ed random element isodisplacement (model)  
n  electron  
nat  natural  
NDCP  N-dimensional critical point analysis  
NEXAFS  near edge X-ray absorption .ne structure  
NLCC  non-linear core correction  
NLDA  non-linear density approximation  
NMR  nuclear magnetic resonance  
NN(N)  (next) nearest neighbor  
norm.  normalized  
NP  no phonon  
npo, NPO  nonpolar optical (scattering)  
oct  octahedral (sometimes o is used as subscript)  
ODCR  optically detected cyclotron resonance  
ODLTS  optical deep level transient spectroscopy  
ODMR  optically detected magnetoresonance  
OLCAO  orthogonalized linear combination of atomic orbitals  
OMVPE  organometallic vapor phase epitaxy  
opt, O  optical  
OPW  orthogonalized plane wave (method)  
orth  mostly as subscript: orthorhombic  
p  hole  
p  pseudocubic (subscript of lattice parameters)  
P  paramagnetism, paramagnetic  
PA  photoacoustic  
PAC  perturbed angular correlation  
PAW  projector augmented wave (method)  
PBN  pyrolytic boron nitride  
DOI: 10.1007/978-3-540-48529-2_2  Landolt-Brnstein  
# Springer 2008  New Series III/44A  

PDOS  partial density of states  
pe  piezoelectric (scattering)  
ph  as subscript: photon, phonon, photo- 
PHCAP  photocapacitance (measurement)  
PL  photoluminescence  
PLE  photoluminescence excitation  
po, PO  polar optical (scattering)  
pol  polaron  
PP  pseudopotentials  
PPA  piezoelectric photoacoustic (measurement)  
PR  photore.ectance  
QDT  quantum dielectric theory  
qh  quasiharmonic  
QRS  quasi-regular solution model  
R  as subscript: Raman  
R, RE  rare earth element  
RAS  regular asssociated solution  
RBS  resonant Brillouin scattering  
RDF  radial distribution function  
rec  recombination  
REEL  re.ection electron energy loss spectroscopy  
rel  relative  
RF  radio frequency  
rh  rhombohedral  
RHEED  re.ection high energy electron diffraction  
RKKY  Ruderman-Kittel-Kasuya-Yosida  
RPA  random phase approximation  
RRR  relative residual resistivity  
rs  rocksalt  
RSG  reentrant spin glass system  
RT  room temperature  
RTA  rapid thermal annealing  
s  surface, sometimes used for scattered  
s  as subscript: shear  
s.s.  solid solution  
sat  mostly as subscript: saturation  
sc  simple cubic  
SCF  self consistent .eld  
SCF-HF  self consistent .eld-Hartree Fock  
SCL  space-charge-limited (current)  
SdH  Shubnikov de Haas (method)  
SDW  spin density wave  
SE  spectroscopic ellipsometry  
SG  space group  
SG  spin glass (phase)  
sh  simple hexagonal  
sh  split-off hole band  
SHG  second harmonic generation  
SI  semi-insulating  
SIC  self-interaction-correction  
SIC-PP  self-interaction-corrected pseudopotentials  
so  spin-orbit  
Landolt-Brnstein  
New Series III/44A  

DOI: 10.1007/978-3-540-48529-2_2 # Springer 2008 
SSR  solid state recrystallized  
ST  slow-transverse  
STE  self trapped exciton  
STH  self trapped hole  
SXES  soft X-ray emission spectrum  
SXPS  soft X-ray photoelectron spectroscopy  
t  tetrahedral  
t  turbostratic (t-BN or BNt)  
t, T  mostly as subscripts or superscripts: transverse  
TA  transverse acoustic  
TB  tight binding  
TB-LMTO  tight binding-linear combination of muf.n-tin orbitals (method)  
TDR  triplet-doublet resonance  
TDS  thermal-diffuse scattering  
TEELS  electron energy loss spectrum in transmission geometry  
TEL(S)  transmission energy loss (spectrum)  
TEM  transmission electron microscope  
TES  two-electron satellites  
tetr  mostly as subscripts: tetragonal  
th, them  thermal, sometimes for theoretical  
theor  theoretical  
THG  third harmonic generation  
THM  travelling heater method  
TIP  temperature independent paramagnetism  
TL  thermoluminescence  
TO  transverse optical  
tot  mostly as subscript: total  
TPA  two-photon absorption  
TPRRS  two-photon resonant Raman scattering  
TPY  total photon yield  
tr  transition (subscript for phase transition parameters)  
trans  transverse  
TSC  thermally stimulated current  
UD  undoped  
uhv, UHV  ultra high vacuum  
UP, IP, LP  upper, intermediate, lower polariton  
UPS  UV photoemission spectroscopy  
uv, UV  ultraviolet  
V  vapor  
v  mostly as subscript: valence band  
vac  vacuum, sometimes for vacancy  
VB  valence band, as subscript v is used  
VBM  valence band maximum  
VCA  virtual crystal approximation  
VGa...  vacancy on Ga... site  
VPE  vapor phase epitaxy  
w  wurtzite  
WDA  weighted-density approximation  
WDS  wavelength derivative spectroscopy  
WMR  wavelength modulated re.ectance  
X  anion (e.g.S, Se, Te), sometimes used for exciton or unknown impurity  
XANES  X-ray absorption near edge spectroscopy  
DOI: 10.1007/978-3-540-48529-2_2  Landolt-Brnstein  
# Springer 2008  New Series III/44A  

Index of Substances, List of Symbols and Abbreviations, Conversion factors 27  
XAS X-ray absorption spectroscopy XES X-ray emission spectroscopy XPS, XPE X-ray photoelectron spectroscopy XRD X-ray diffraction zb zincblende  

Conversion factors 
Conversion factors of all occurring quantities from the SIU system into the CGS-esu and the CGS-emu systems can be found in the respective Landolt-Brnstein Volumes III/41A to III/41E. 
Experimental errors are frequently given in parentheses referring to the last decimal places. For example, 
1.352(12) stands for 1.352  0.012 and 342.5(21) stands for 342.5  2.1. 
Depending on the actual settings, the energy Eis represented by different physical quantities: 
E= eV= h. = hc.
,[E]= 1J= 1 VA s = 107 erg = 2.38845  104 kcal. 
Yet, energy and its equivalent quantities are related by the following conversion factors: 

E [J]  V [V]  v [Hz, s1]  .n[cm1]  
1J 1V 1s1 (= l Hz) lcm1  1 1.60219  1019 6.62619  1034 1.98648  1023  6.2415  1018 1 4.13550  1015 1.23979  104  1.50916  1033 2.41797  1014 1 2.99792  1010  5.03403  1022 8.06547  103 3.33564  1011 1  

Landolt-Brnstein DOI: 10.1007/978-3-540-48529-2_2 New Series III/44A # Springer 2008 

